Avago Technologies Fiber IP (singapore) Pte. Ltd

Agilent Technologies, Inc.

Simone Codato

Marzia Rosso

Ruiyu Fang

Claudio Coriasso

Guido Alberto Roggero

Cesare Rigo

Alessandro Stano

Rui Yu Fang

Paolo Valenti

Pietro Della Casa

Fang Ruiyu

Rigo Cesare

A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Integrated photonic semiconductor devices and methods for making integrated photonic semiconductor devices

Integrated photonic semiconductor devices and methods for making integrated photonic semiconductors devices

In an arrangement comprised of an electro-absorption modulator integrated with a laser source, the electro-absorption modulator includes a respective metal contact pad, wherein the metal pad is positioned over a localised semi-insulating layer island, such as a Fe&#x2014;InP island.

Integrated modulator-laser structure and a method of producing same

An laser/modulator assembly includes a laser source, such as a distributed feedback (DFB) laser, and a modulator, such as an electro-absorption modulator (EAM), integrated along a common waveguide. The waveguide has a distal end bent to define an inner side of the bent waveguide. A low reflectivity facet is arranged at the distal end of the waveguide, and a mirror is arranged at the inner side of the distal end of the waveguide to prevent any back reflection into the EAM waveguide from said low reflectivity facet, and the lateral trenches typically associated therewith.

Integrated modulator/laser assembly and a method of producing same

A SAG technique is used to grow the ridge structure in a photonic semiconductor device, such as an electroabsorption modulator integrated with a distributed feedback laser (EML) assembly. The adoption of this SAG technique to grow the ridge structure results in the formation of a self-assembled and self-aligned ridge structure that has a very precise configuration. The use of this process enables straight, bent and tilted ridge structures to be formed with high precision. In addition, because the ridge structure is self-assembled and self-aligned, a lesser number of processing steps are required to create the photonic device in comparison to the known approach that uses wet chemical etching techniques to form the ridge structure. The high precision of the ridge structure and the lesser number of processing steps needed to create the device increase manufacturing yield and allow overall cost of the device to be reduced.

Integrated photonic semiconductor devices having ridge structures that are grown rather than etched, and methods for making same

Integrated semiconductor devices are manufactured by providing a layered semiconductor structure having an exposed surface and providing a mask on the exposed surface thereby defining a masked region in the layered structure underneath said mask. The mask has a main direction of extension with a width across the main direction and an end portion. The layered structure is etched over a given depth starting from the exposed surface, whereby the masked region is left substantially unaffected by the etching process and has an end surface extending underneath the end portion of the mask. A further layered semiconductor structure is grown around the masked region to produce an integrated layered semiconductor structure having at the end surface an interface between the layered structure and the further grown structure. The mask width is selected to be less than 50 microns.

Method of manufacturing integrated semiconductor devices and related devices

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Turin, Italy

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