Northwestern University

Simone Bianconi

Hooman Mohseni

Memristor devices are provided. In an embodiment, a memristor device comprises a top electrode; a bottom electrode; a dielectric material between the top and bottom electrodes; and an ion-implanted conductive region embedded within the dielectric material, the ion-implanted conductive region comprising the dielectric material. The ion-implanted conductive region forms an interface with the dielectric material such that a voltage applied across the top and bottom electrodes causes electrons to cross the interface as they move between the top and bottom electrodes so that the memristor device exhibits memristance.

Memristor devices embedded in dielectrics

Methods for creating a conductive feature in a dielectric material are provided. In an embodiment, such a method comprises irradiating a region of a dielectric material having a resistivity of at least 10W cm with a focused ion beam, the irradiated region corresponding to a conductive feature embedded in the dielectric material, the conductive feature having a conductivity greater than that of the dielectric material; and forming one or more contact pads of a conductive material in electrical communication with the conductive feature, the one or more contact pads configured to apply a voltage across the conductive feature using a voltage source.

Growing community of inventors

Evanston, IL, United States of America

Simone Bianconi