Siltronic Ag

Simon Zitzelsberger

Goetz Meisterernst

Ludwig Altmannshofer

Christoph Frey

Kurt Niederer

Gundars Ratnieks

Rupert Krautbauer

Frank Muemmler

Lothar Lehmann

Josef Berger

Helmut Teroerde

Frank Mümmler

Götz Meisterernst

Helmut Terörde

Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving

Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer

A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.

Method of supporting a growing single crystal during crystallization of the single crystal according to the FZ method

A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby

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Neuoetting, Germany

Simon Zitzelsberger