Finisar Corporation

Simon Rabinovich

James Kenneth Guenter

James Robert Biard

Michael James Haji-Sheikh

Bobby Marion Hawkins

Michael J Haji-Sheikh

Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (). Electrical bias () and/or thermal power () is applied on each side of a wafer () having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer () is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system () is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact () using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate () to a substrate surface of said semiconductor wafer; providing electrical power () to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power () to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (); and removing electrical and physical contact to said semiconductor wafer ().

Methods of conducting wafer level burn-in of electronic devices

In one example, a wafer level burn-in system includes a first electrode plate for providing electrical contact simultaneously to contacts of a group of semiconductor devices borne by a semiconductor wafer on a device surface of the semiconductor wafer. A second electrode plate is employed for providing electrical contact to a substrate surface of the semiconductor wafer. Finally, an electrical power generator is employed for providing electrical power to the group of semiconductor devices through the contacts and the substrate of the semiconductor wafer through the first and second electrode plates.

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Plano, TX, United States of America

Simon Rabinovich