Cree Gmbh

Cree Microwave, Inc.

Macom Technology Solutions Holdings, Inc.

Wolfspeed, Inc.

Simon Maurice Wood

Khaled Fayed

Raymond Sydney Pengelly

James Milligan

Donald Farrell

Ulf Andre

William Pribble

Mitchell Flowers

Chris Hermanson

John Phillip Quinn

Scott Thomas Sheppard

Jeremy Fisher

Dan Namishia

Bradley Millon

Mitch Flowers

E James Crescenzi

Tom Stewart Dekker

Raymond S Pengelly

Tom S Dekker

James E Crescenzi

A transistor device includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.

Bypassed gate transistors having improved stability

A transistor includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.

A packaged transistor amplifier includes a package having an input lead and an output lead; a transistor stage having a plurality of unit cell transistors that are electrically coupled to the input lead in parallel, each of the unit cell transistors having an output; a first output bond pad that is coupled to a first subset of the outputs of the unit cell transistors by a first feed network; a second output bond pad that is separate from the first output bond pad, the second output bond pad coupled to a second subset of the outputs of the unit cell transistors by a second feed network; a first output bond wire coupled between the first output bond pad and the output lead; and a second output bond wire coupled between the second output bond pad and the output lead. Related design methods are also provided.

Transistor amplifiers having node splitting for loop stability and related methods

Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.

High power MMIC devices having bypassed gate transistors

A transistor device includes a source contact extending in a first direction, a gate finger extending in the first direction adjacent the source contact, and a drain contact adjacent the gate finger, wherein the gate finger is between the drain contact and the source contact. The device further includes a gate jumper extending in the first direction, a gate bus connected to the gate jumper and the gate finger, and a gate signal distribution bar that is spaced apart from the gate bus in the first direction and that connects the gate jumper to the gate finger.

Transistor with bypassed gate structure field

A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells, an RF input lead coupled to the plurality of RF transistor cells, an RF output lead, and an output matching network coupled between the plurality of RF transistor cells and the RF output lead. The output matching network includes a plurality of capacitors having respective upper capacitor plates, wherein the upper capacitor plates of the capacitors are coupled to output terminals of respective ones of the RF transistor cells. The plurality of capacitors may be provided as a capacitor block that includes a common reference capacitor plate and a dielectric layer on the reference capacitor plate. The upper capacitor plates may be on the dielectric layer.

RF transistor packages with high frequency stabilization features and methods of forming RF transistor packages with high frequency stabilization features

A transistor package includes a transistor and one or more bandwidth limiting matching networks. The one or more bandwidth limiting matching networks are coupled to one of a control contact and an output contact of the transistor in order to limit the gain response of the transistor outside of a predetermined frequency band. Specifically, the transistor package has a gain roll-off greater than 0.5 dB within 200 MHz of the predetermined frequency band, while providing signal losses less than 1.0 dB inside the predetermined frequency band at a power level greater than 240 W. By providing the bandwidth limiting matching networks in the transistor package, the gain response of the transistor may be appropriately limited in order to comply with the spectral masking requirements of one or more wireless communications standards, for example, Long Term Evolution (LTE) standards.

Bandwidth limiting methods for GaN power transistors

A gallium nitride (GaN) radio frequency integrated circuit (RFIC) is configured to receive and amplify a low-level WiFi signal to generate a WiFi transmit signal. By using a GaN RFIC, the performance of the RFIC is significantly improved when compared to conventional RFICs for WiFi signals. In one exemplary embodiment, the RFIC has an error vector magnitude less than 29 dBc, an average power output around 29 dBm, and an average power added efficiency of greater than 25%. In additional embodiments, the RFIC has a gain greater than about 32 dB and a peak output power around &#x2212;37 dB.

GaN amplifier for WiFi applications

A transistor package includes a lead frame, a wide band-gap transistor attached to the lead frame, and an over-mold surrounding the lead frame and the wide band-gap transistor. The wide band-gap transistor has a peak output power greater than 150 W when operated at a frequency up to 3.8 GHz. Using an over-mold along with a wide band-gap transistor in the transistor package allows the transistor package to achieve an exceptionally high efficiency, gain, and bandwidth, while keeping the manufacturing cost of the transistor package low.

Over-mold plastic packaged wide band-gap power transistors and MMICS

A transistor package includes a lead frame and a gallium nitride (GaN) transistor attached to the lead frame. The lead frame and the GaN transistor are surrounded by an over-mold with a glass transition temperature greater than about 135&#xb0; C. and a flexural modulus less than about 20 GPa. Using an over-mold with a glass transition temperature greater than about 135&#xb0; C. and a flexural modulus less than about 20 GPa allows the over-mold to handle the heat produced by the GaN transistor while preventing damage to the GaN transistor due to thermal expansion and/or contraction of the over-mold.

Over-mold packaging for wide band-gap semiconductor devices

A microwave integrated circuit includes a substrate and a power amplifier on the substrate. The power amplifier includes a power divider circuit having an input configured to receive an input RF signal, a base amplifier having an input coupled to a first output of the power divider circuit and a peaking amplifier having an input coupled to a second output of the power divider circuit and an output coupled to an output combining node. The power amplifier further includes an impedance inverter circuit coupling the output of the base amplifier to the output combining node and a load matching circuit having an input coupled to the output combining node and an output configured to be coupled to a load.

MMIC power amplifier

A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells. The input matching network further includes a plurality of resistors coupled respectively between adjacent input terminals of the capacitors.

RF transistor packages with internal stability network including intra-capacitor resistors and methods of forming RF transistor packages with internal stability networks including intra-capacitor resistors

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Sunnyvale, CA, United States of America

Simon Maurice Wood