Other

National Yang Ming Chiao Tung University

Simon M Sze

Shih-Hsiung Chan

Jian-Shihn Tsang

Jan-Dar Guo

Po-Tsun Liu

Wei-Chi Lai

Chen-Shuo Huang

Yoshio Nishi

Yi-Ling Huang

Szu-Lin Cheng

The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical COfluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric characteristics of gate insulator after high-temperature thermal annealing process.

Method for forming an interfacial passivation layer on the Ge semiconductor

The present invention relates to a light emitting diode with high luminance and method for making the same, and more particularly to a light emitting diode having a transparent window layer which is formed by a semiconductor film of nitrogen-containing compounds. The present invention is mainly directed to growing a window layer of a light emitting diode with a nitrogen-containing compound on the double heterostructure of InGaAlP. Since the energy gap of the nitrogen-containing compound is greater than that of the light emitted from the active layer and is smaller than that of GaP, it is easily to be doped and to form metallic ohmic electrode. Therefore, it is suitable to form a window layer, thereby increasing the light emitting efficiency of a light emitting diode. In addition, the nitrogen-containing compounds can be formed by the current MBE or OMVPE techniques. Therefore, the light emitting diode can be mass-produced and does have industrial applicability.

Light emitting diode with high luminance and method for making the same

A new method for manufacturing a Group III metal nitride epitaxial wafer comprises providing a first nitrogen-contained gas source, providing a second Group III metal trichloride--containing gas source, and causing said first gas to react with second gas in a heating region, thereby forming a Group III metal nitride epitaxial layer on a substrate. The formed epitaxial wafer can serve as a substrate of a laser diode.

Method for manufacturing an epitaxial wafer with a group III metal

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Hsinchu, Taiwan

Simon M Sze