International Business Machines Corporation

Simon M Karecki

Sampath Purushothaman

Timothy Joseph Dalton

Stephen McConnell Gates

Kevin Shawn Petrarca

Richard Paul Volant

Satyanarayana Venkata Nitta

George Frederick Walker

Stephen Edward Greco

Carlos Juan Sambucetti

Shyng-Tsong Chen

Bruce Kenneth Furman

Maheswaran Surendra

Michael D Armacost

John Harold Magerlein

Sherif Ahmed Goma

Minakshisundaran Balasubramanian Anand

A method is described for forming a metal pattern in a low-dielectric constant substrate. A hardmask is prepared which includes a low-k lower hardmask layer and a top hardmask layer. The top hardmask layer is a sacrificial layer with a thickness of about 200 &angst;, preferably formed of a refractory nitride, and which serves as a stopping layer in a subsequent CMP metal removal process. The patterning is performed using resist layers. Oxidation damage to the lower hardmask layer is avoided by forming a protective layer in the hardmask, or by using a non-oxidizing resist strip process.

Fine-pitch device lithography using a sacrificial hardmask

A microjoint interconnect structure comprising a dense array of metallic studs of precisely controllable height tipped with a joining metallurgy. The array is produced on a device chip that is to be attached to a carrier, or to a carrier along with other devices, some of which may be selected to have similar interconnect structures so as to form all together an assembled carrier that functions as a complete computing, communications or networking system.

High density raised stud microjoining system and methods of fabricating the same

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Poughkeepsie, NY, United States of America

Simon M Karecki