Zarlink Semiconductor Limited

Simon Lloyd Thomas

Martin Clive Wilson

A method of forming an electrical isolation trench in a silicon-on-insulator (SOI) structure. The method comprises forming a first oxide layer on top of the upper silicon layer of the SOI structure, forming a polysilicon layer on top of said oxide layer, forming a second oxide layer on top of said polysilicon layer, patterning the first oxide layer, polysilicon layer, and second oxide layer to provide an etch mask, etching the upper silicon layer of the SOI structure to form said trench, and removing said second oxide layer and said polysilicon layer.

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Swindon, United Kingdom

Simon Lloyd Thomas