Tel Aviv University

Sandisk Technologies Inc.

Sandisk Il Ltd.

Infineon Technologies Ag

Tower Semiconductor Ltd.

Lucent Technologies Inc.

M-Systems Flash Disk Pioneers, Ltd.

Simon Litsyn

Eran Sharon

Idan Alrod

Menahem Lasser

Mark Murin

Yakov Roizin

Omer Fainzilber

Amir Ban

Gil Rosenman

Ariel Navon

Alexander Shpunt

Ishai Ilani

Yossi Erlich

Amir Handelman

Alexei Ashkhmin

A porous layer is described. The porous layer comprises a solidified sol-gel inorganic material having a distribution of nanometric voids, wherein at least some of nanometric voids are at least partially coated internally by carbon or a hydrophobic substance containing carbon.

Composition and method for forming a dielectric layer

A method of fabricating a nanoshell is disclosed. The method comprises coating a nanometric core made of a first material by a second material, to form a core-shell nanostructure and applying non-chemical treatment to the core-shell nanostructure so as to at least partially remove the nanometric core, thereby fabricating a nanoshell. The disclosed nanoshell can be used in the fabrication of transistors, optical devices (such as CCD and CMOS sensors), memory devices and energy storage devices.

Nanoshell, method of fabricating same and uses thereof

A method and system for optimizing flash memory without dedicated parity area and with reduced array size. The memory size of a multi level cell (MLC) flash is reduced and controller operation is simplified. Simplified operation includes the controller being able to program each host data page to an integer number of flash pages. A maximal available information bits per cell (IBPC) is maintained in a flash device while also maximizing the programming throughput of the flash. Features include the ability to dynamically select which number of cell states is used by flash memory cells.

Optimized flash memory without dedicated parity area and with reduced array size

k information bits are encoded according to a code with which is associated a parity check matrix H that has n columns. The entire resulting codeword is stored in a storage medium. At least n'&#x3c;n bits of a representation of the codeword are read from the storage medium and an attempt is made to decode only the n&#x2032; bits using a matrix H&#x2032; that has fewer columns than H. Typically, H has m=n&#x2212;k rows and H&#x2032; has m&#x2212;(n&#x2212;n&#x2032;) rows and n&#x2032; columns. If the attempt fails, one or more additional bits are read from the storage medium, if necessary, and are combined with the n&#x2032; bits, and the decoding attempt is repeated using a matrix H&#x2032;&#x2033; that has more columns than H&#x2032;.

Compact decoding of punctured codes

A method includes, when using a binary cache in an multi-level cell (MLC) flash memory splitting a codeword corresponding to a data page into multiple data pages and storing the multiple data pages into multiple single level cell (SLC) pages of the binary cache for subsequent storage into a single wordline of the MLC flash memory.

Systems and methods of storing data

A method of writing data includes receiving a data page to be stored in a data storage device and initiating an encode operation to encode the data page. The encode operation generates first encoded data and a first portion of the first encoded data is stored to the first physical page of the data storage device. The method includes initiating storage of a second portion of the first encoded data to a second physical page of the data storage device. The method also includes initiating a decode operation to recover the data page. The decode operation uses a representation of the first portion of the first encoded data that is read from the first physical page without using any data from the second physical page.

An example method is provided that includes receiving a representation of a codeword that includes a plurality of bits, and associating the bits with a respective plurality of one-bit hard-bit values representing the bits and multiple-bit soft-bit values representing measures of reliability of respective hard-bit values. The method includes for each of a plurality of iterations, updating a hard-bit/soft-bit value of one or more bits of a respective subset of the bits as a function of current hard-bit values of the subset's bits, and the current hard-bit and soft-bit values of the respective bit. For two iterations in which the current hard-bit and soft-bit values for each bit of a subset for both iterations is the same, the hard-bit/soft-bit value updated for any bit of the subset during one of the two iterations is the same as that computed for the respective bit during the other of the two iterations.

Error-correction decoding with reduced memory and power requirements

Data that are stored in cells of a multi-bit-per cell memory, according to a systematic or non-systematic ECC, are read and corrected (systematic ECC) or recovered (non-systematic ECC) in accordance with estimated probabilities that one or more of the read bits are erroneous. In one method of the present invention, the estimates are a priori. In another method of the present invention, the estimates are based only on aspects of the read bits that include significances or bit pages of the read bits. In a third method of the present invention, the estimates are based only on values of the read bits. Not all the estimates are equal.

Probabilistic error correction in multi-bit-per-cell flash memory

To store, successively, in a plurality of memory cells, first and second pluralities of input bits that are equal in number, a first transformation transforms the first input bits into a first plurality of transformed bits. A first portion of the cells is programmed to store the first transformed bits according to a mapping of bit sequences to cell levels, but, if the first transformation has a variable output length, only if there are few enough first transformed bits to fit in the first cell portion. Then, without erasing a second cell portion that includes the first portion, if respective levels of the cells of the second portion, that represent a second plurality of transformed bits obtained by a second transformation of the second input bits, according to the mapping, are accessible from the current cell levels, the second portion is so programmed to store the second transformed bits.

Multiple programming of flash memory without erase

A method of writing data includes receiving data pages to be stored in a data storage device and generating codewords corresponding to the received data pages. The codewords are stored to physical pages of a first memory portion of the data storage device. A first portion of a particular codeword that corresponds to a particular data page is stored at a first physical page of the first memory portion. A second portion of the particular codeword is stored at a second physical page of the first memory portion. The codewords are copied from the physical pages of the first memory portion to a physical page of a second memory portion of the data storage device.

A representation of a codeword is decoded by applying a first decoder of the codeword to the representation of the codeword. If applying the first decoder fails to decode the representation of the codeword then a second decoder of the codeword is applied to the representation of the codeword. Preferably, applying the first decoder consumes less power and is faster than applying the second decoder. Data are ported by encoding the data as a codeword, exporting the codeword to a corrupting medium, importing a representation of the codeword, and applying a first decoder to the representation of the codeword. If applying the first decoder fails to decode the representation of the codeword then a second decoder of the codeword is applied to the representation of the codeword.

Error correction decoding by trial and error

Systems and methods to decode data stored in a data storage device are disclosed. Data bits stored in a first group of storage elements are decoded using data in a second group of storage elements together with physical characteristics of the second group of storage elements to aid in the decoding of the first group of storage elements.

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Giv′at-Shmuel, Israel

Simon Litsyn