Novellus Systems Incorporated

Timedomain Cvd, Inc.

Watkins- Johnson Company

Simon I Selitser

Ronald Allan Powell

Emerson Derryck Settles

Gabriel I Font-Rodriguez

Ron Van Os

Lydia J Young

Richard H Matthiesen

An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.

Atmospheric pressure inductive plasma apparatus

An apparatus and method for injecting gas within a plasma reactor and tailoring the distribution of an active species generated by the remote plasma source over the substrate or wafer. The distribution may be uniform, wafer-edge concentrated, or wafer-center concentrated. A contoured plate or profiler modifies the distribution. The profiler is an axially symmetric plate, having a narrow top end and a wider bottom end, shaped to redistribute the gas flow incident upon it. The method for tailoring the distribution of the active species over the substrate includes predetermining the profiler diameter and adjusting the profiler height over the substrate. A coaxial injector tube, for the concurrent injection of activated and non-activated gas species, allows gases to be delivered in an axially symmetric manner whereby one gas can be excited in a high density RF plasma, while the other gas can be prevented from excitation and/or dissociation caused by exposure to the plasma or heated surfaces in the source apparatus. The profiler is used in conjunction with the coaxial injector tube for redistributing the excited gases emerging from the injector tube, while allowing the non-excited gases to pass through its center.

Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor

Apparatus for injecting and modifying gas concentration of a meta-stable species in a downstream plasma reactor

A system for injecting a gaseous substance into a semiconductor processing chamber. The injection system includes at least one plenum formed in a plenum body and a plurality of nozzles associated with each plenum for injecting gaseous substances from the plenums into the chamber. A conduit structure transports gaseous substances along an indirect path from the plenum to the nozzles. The nozzles are positioned and configured to provide a uniform distribution of gaseous substances across the wafer surface.

Gas injection system for semiconductor processing

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Fremont, CA, United States of America

Simon I Selitser