Applied Materials, Inc.

Simon Herbert Povall

David Richard Burgin

Amir Hamed Al-Bayati

David George Armour

Drew Arnold

Adrian John Murrell

Bernard F Harrison

Robert J Mitchell

Paul A Burfield

John Pontefract

Andrew Holmes

David Loome

Leslie Lane

Michael J King

Erik Jan Hilda Collart

Andrew James Timothy Holmes

Chris James Burgess

A vaporizer generating feed gas for the arc chamber of an ion source has a crucible which is heated to a temperature at which material in the crucible sublimes to produce a vapour for use as the feed gas. In addition to the heating element for heating the crucible, there is a cooling element in the form of a cooling duct extending along the length of the crucible for receiving the cooling fluid. Forced cooling of the crucible when the heating element is switched off enables the crucible to be cooled more quickly so that the supply of a feed gas can be terminated sooner. This is important if an ion source is being switched from one feed gas to another. Also, the crucible may be forced cooled simultaneously while energizing the heating element to enable the crucible to be accurately controlled at a lower operating temperature if desired.

Vaporizer for generating feed gas for an arc chamber

An ion implanter has an ion source () and an ion beam extraction assembly () for extracting the ions. The extraction assembly () is a tetrode structure and one of the pairs of extraction electrodes () has left and right ports () located in opposite sides of the ion beam emerging from the ion source (). The left and right electrode ports () are electrically isolated from each other and connected to independent voltage sources (). The ion implanter also has a baffle plate () at the entrance to a mass analyser () downstream of the extraction assembly (). The baffle plate () is also split into two halves (' and&#x2033;). By measuring the beam current incident on the two halves (&#x2033;) of the baffle (), the relative voltages supplied to the left and right electrode parts () may be adjusted so as to steer the ion beam and adjust the angle of incidence of the longitudinal axis thereof relative to the input of the analysing magnet ().

Apparatus and method for monitoring and tuning an ion beam in ion implantation apparatus

Ion implantation beam monitor

An ion beam generation apparatus comprising an ion source ( ) for generating ions, and a tetrode extraction assembly ( ) comprising four electrodes for extracting and accelerating ions from the ion source. The extraction assembly comprises a source electrode ( ) at the potential of the ion source, an extraction electrode ( ) adjacent to the source electrode to extract ions from the ion source ( ), a ground electrode ( ), and a suppression electrode ( ) between the extraction electrode and the ground electrode. Each electrode has an aperture to allow the ion beam to pass therethrough. The gap between the extraction ( ) and suppression ( ) electrodes is variable in the direction of ion beam travel.

Ion beam generation apparatus

Ion beam apparatus

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Ashington, United Kingdom

Simon Herbert Povall