Headway Technologies, Incorporated

Hgst Netherlands, B.v.

Simon H Liao

Kochan Ju

Min Li

Cheng Tzong Horng

Youfeng Zheng

Ru-Ying Tong

Jei-Wei Chang

Quang Le

Bernard Dieny

Guangli Liu

Kunliang Zhang

Mao-Min Chen

You Feng Zheng

Masashi Sano

Yun-Fei Li

Yongchul Ahn

Cherng Chyi Han

Kiyoshi Noguchi

Xiaozhong Dang

Ru Ying Tong

You Fong Zheng

David John Seagle

Yue Liu

Rongfu Xiao

Jeiwei Chang

Koichi Terunuma

Rachid Sbiaa

Yimin Guo

Aron Pentek

Stefan Maat

Hui-Chuan Wang

Yimin Hsu

Petrus Antonius Van Der Heijden

Chyu Jiuh Torng

Charles C Lin

Thomas L Leong

Shuxia Wang

Ku-Ying Tong

A magnetic sensor having a novel pinning structure resulting in a greatly reduced gap spacing. The sensor has a magnetic free layer structure that extends to a first stripe height and a magnetic pinned layer structure that extends to a second stripe height that is longer than the first stripe high. A layer of anti-ferromagnetic material is formed over the pinned layer structure in the region beyond the first stripe height location. In this way, the antiferromagnetic layer is between the pinned layer and the second or upper shield and does not contribute to gap spacing.

Magnetic sensor having an extended pinned layer with stitched antiferromagnetic pinning layer

A magnetic read head that has improved pinned layer stability while also maintaining excellent free layer stability. The free layer has sides that define a trackwidth of the sensor and a back edge that defines a functional stripe height of the sensor. However, the pinned layer can extend significantly beyond both the width of the free layer and the back edge (e.g. stripe height) of the free layer. The sensor also has a soft magnetic bias structure that compensates for the reduced volume presented by the side extension of the pinned layer. The soft magnetic bias structure can be magnetically coupled with the trailing magnetic shield, either parallel coupled or anti-parallel coupled. In addition, all or a portion of the soft magnetic bias structure can be exchange coupled to a layer of anti-ferromagnetic material in order to improve the robustness of the soft magnetic bias structure.

Magnetic sensor with extended pinned layer and partial wrap around shield

A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias structure. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.

Magnetic bias structure for magnetoresistive sensor having a scissor structure

A magnetic read sensor having an extended pinned layer structure and also having an extended free layer structure. The extended pinned layer structure and extended free layer structure both extend beyond the strip height of the free layer of the sensor to provide improved pinning strength as well as improved free layer biasing reliability and bias field strength.

Magnetic sensor having an extended pinned layer and shape enhanced bias structure

The present invention generally relates to a magnetic sensor in a read head having a hard or soft bias layer that is uniform in thickness within the sensor stack. The method of making such sensor is also disclosed. The free layer stripe height is first defined, followed by defining the track width, and lastly the pinned layer stripe height is defined. The pinned layer and the hard or soft bias layer are defined in the same process step. This approach eliminates a partial hard or soft bias layer and reduces potential instability issues.

Shape enhanced pin read head magnetic transducer with stripe height defined first and method of making same

A magnetic read sensor having a hard bias structure that extends beyond the back edge of the sensor stack by a controlled, distance that is chosen to maximize both hard bias field and hard bias magnetic coercivity and anisotropy. The hard bias structure has a back edge that is well defined and that has a square corner at its innermost end adjacent to the sensor stack. The magnetic sensor can be constructed by a process that includes a separate making an milling process that is dedicated to defining the back edge of the hard bias structure.

Magnetic sensor having hard bias structure for optimized hard bias field and hard bias coercivity

A magnetic scissor type magnetic read head having magnetic side shielding for reduced effective track width and having side biasing for improved stability. The read head includes first and magnetic side shields that each include first and second magnetic layers and an anti-parallel exchange coupling layer sandwiched there-between. The magnetic layers of the side shields are anti-parallel coupled with one another such that one of the magnetic layers has its magnetization oriented in a first direction parallel with the air bearing surface and the second magnetic layer has its magnetization oriented in a second direction that is opposite to the first direction and also parallel with the air bearing surface. These magnetizations of the first and second magnetic layers provide a bias field that stabilizes the magnetization of the free magnetic layers of the sensor stack to prevent flipping of the magnetizations of these layers.

Scissor magnetic read head with wrap-around magnetic shield

A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.

Method for manufacturing a magnetic sensor using two step ion milling

It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high &#x2212;10to &#x2212;10. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.

GMR device having an improved free layer

Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

Patterned, synthetic longitudinally exchange biased GMR sensor

An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.

FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures

As track widths of magnetic read heads grow very small, conventional longitudinal bias stabilization has been found to no longer be suitable since the strong magnetostatic coupling at the track edges also pins the magnetization of the free layer. This problem has been overcome by extending the free layer so that it is no longer confined to the area immediately below the spacer or tunneling layer. A longitudinal bias layer immediately below the free layer is given a relatively weak magnetic exchange coupling field of about 200 Oe. Although there is strong exchange coupling between this and the free layer, the degree of pinning of the free layer is low so that the device's output signal is reduced by less than about 10%. A process for manufacturing both the CPP SV and a MTJ versions of the invention is described.

CPP and MTJ reader design with continuous exchange-coupled free layer

A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagnetic free layer (F1) and the ferromagnetic biasing layer (F2) which enables the optimal thicknesses of those layers to be determined for a wide range of ferromagnetic materials and exchange coupling materials. The relationship to be satisfied is M/M=(J+J)/J, where Jis the synthetic coupling energy between F1 and F2 and Jis the exchange energy between F2 and an overlaying antiferromagnetic pinning layer. An alternative embodiment omits the overlaying antiferromagnetic pinning layer which causes the relationship to become M/M=1.

Synthetic pattern exchange configuration for side reading reduction

A method for fabricating a stitched CPP synthetic spin-valve sensor with in-stack stabilization of its free layer. The method can also be applied to the formation of a stitched tunneling magnetoresistive sensor. The free layer is strongly stabilized by magnetostatic coupling through the use of a longitudinal biasing formation that includes a ferromagnetic layer, denoted LBL, within the pillar portion of the sensor and a synthetic exchange coupled tri-layer within the stitched portion of the sensor. The tri-layer consists of two ferromagnetic layers, FMand FMseparated by a coupling layer and magnetized longitudinally in antiparallel directions. A criterion for the magnetic thicknesses of the layers: [t(LBL)+t(FM)]/t(FM)=70/90 angstroms of CoFe insures a strong exchange coupling. The magnetization of the tri-layer is done in a low field anneal that does not disturb the previous magnetization of the ferromagnetic free layer.

Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head

A method for forming a laminated shield to improve the stability and performance of an MR read head and the MR read head formed using that shield. The shield consists of two layers of ferromagnetic material separated by a layer of ruthenium, allowing the ferromagnetic layers to form an antiferromagnetic configuration by means of a quantum mechanical exchange interaction. The antiferromagnetic configuration has a stable domain structure and a magnetization that forms closed loops around the shield edges thereby reducing noise in the readback signal and reducing disturbances to the magnetic state of the sensor element.

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Fremont, CA, United States of America

Simon H Liao