Stmicroelectronics S.a.

Simon Guillaumet

Jean-Pierre Oddou

Christophe Legendre

Marc Vincent

Hugues Leininger

Jerome Alieu

Hughes Leininger

Jérôme Alieu

A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production

Growing community of inventors

Vaulnaveys-le-Haut, France

Simon Guillaumet