Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Christian-albrechts-universitaet Zu Kiel

Christian-albrechts-universitat Zu Kiel

Simon Fichtner

Bernhard Wagner

Fabian Lofink

Dirk Kaden

A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

Ferroelectric material, MEMS component comprising a ferroelectric material, MEMS device comprising a first MEMS component, method of producing a MEMS component, and method of producing a CMOS-compatible MEMS component

Ferroelectric semiconductor device with a memory cell, with a ferroelectric memory layer and a first conductive layer disposed on the ferroelectric memory layer; and a semiconductor device connected to the memory cell. The ferroelectric memory layer of the memory cell can include a mixed crystal with a group III nitride and a non-group III element.

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Simon Fichtner