Cyrium Technologies Incorporated

National Research Council of Canada

Avago Technologies International Sales Pte. Limited

Broadcom Corporation

Toyota Motor Engineering & Manufacturing North America, Inc.

University of Ottawa

Azastra Opto Inc.

Simon Fafard

Denis Paul Masson

Bruno J Riel

Norbert Puetz

Ercan Mehment Dede

Hui C Liu

Matthew Wilkins

Christopher Valdivia

Karin Hinzer

Philippe-Olivier Provost

Eric Desfonds

Hui Chun Liu

Joseph René Bruno Riel

A connector that provides alignment of an optical fiber to a photonic device. The connector has a threaded sleeve, a ferrule cavity, an aperture in optical communication with the ferrule cavity and having a center that is substantially aligned with a center of the ferrule cavity and a device cavity that is configured to receive the photonic device and further in optical communication with the ferrule cavity via the aperture.

Connector for photonic device

An optical power transfer device with an embedded active cooling chip is disclosed. The device includes a cooling chip made of a semiconductor material, and a first subassembly and a second subassembly mounted on the cooling chip. The cooling chip comprises at least one metallization layer on a portion of a first surface of the cooling chip, at least one inlet through a second surface of the cooling chip, wherein the second surface is opposite to the first surface, at least one outlet through the second surface and one or more micro-channels extending between and fluidly coupled to the at least one inlet and the at least one outlet. A cooling fluid flows through the one or more micro-channels. The first subassembly is mounted on the at least one metallization layer and comprises a laser. The second subassembly comprises a phototransducer configured to receive a laser beam from the laser.

Optical power transfer devices with an embedded active cooling chip

An optical transducer system that has a light source and a transducer. The light source generates light that has a predetermined photon energy. The transducer has a bandgap energy that is smaller than the photon energy. An increased optical to electrical conversion efficiency is obtained by illuminating the transducer at increased optical power densities. A method of converting optical energy to electrical energy is also provided.

Transducer to convert optical energy to electrical energy

An optical transducer, optoelectronic device, and semiconductor are disclosed. An illustrative optical transducer is disclosed to include a plurality of p-n stacks, where each p-n stack comprises at least a p-layer and an n-layer, and formed therein a built-in photovoltage between the p-layer and the n-layer. The p-layers and n-layers are disclosed to have substantially the same n-type material in substantially the same composition such that each p-n stack in the plurality of p-n stacks has a substantially similar built-in photovoltage. The optical transducer is further disclosed to include a plurality of connecting layers, each connecting layer in the plurality of connecting layers being sandwiched between two adjacent p-n stacks for electrically connecting the two adjacent p-n stacks. The p-n stacks in the plurality of p-n stacks may be arranged such that the built-in photovoltage of each p-n stack additively contributes to an overall electric potential of the transducer.

A transducer to convert optical energy to electrical energy. The transducer or photo-transducer has a base layer which has a group of connecting elements formed therein at separations which are increasing with the distance away from an emitter layer formed atop the base layer. The connecting elements separate and electrically connect the base layer into base segments, the base segments having increasing thicknesses with the distance away from the emitter layer. The photo-transducer generates an output voltage that is greater than the input light photovoltage. The photo-transducer output voltage is proportional to the number of connecting elements formed in the base layer.

A solar cell with spaced apart groupings of self-assembled quantum dot layers interposed with barrier layers. Such groupings allow improved control over the growth front quality of the solar cell, the crystalline structure of the solar cell, and on the performance metrics of the solar cell.

Solar cell with epitaxially grown quantum dot material

A solar cell and a method of fabricating solar cells. The method includes a step of separating neighbor solar cells formed on a semiconductor wafer by scribing the wafer to form scribe lines on the wafer and applying a force at, or adjacent to, the scribed lines to separate the solar cells. The scribing is effected on a cap layer covering a window layer of solar cells, thereby minimizing damage to the window layer and mitigating propagation of defects into p-n junctions formed in the solar cells.

Solar cell and method of fabrication thereof

A multi junction solar cell having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The solar cell includes an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the solar cell and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.

Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails

An apparatus and method to electrically and optically characterize a multijunction solar cell. The apparatus can have as many light sources as there are subcells in the multijunction solar cell. Each light source has an optical spectrum that falls within the bandgap energy of a corresponding subcell. Each light source has a controllable intensity level.

Apparatus and method to characterize multijunction photovoltaic solar cells

Electronic and opto-electronic devices having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The devices include an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the devices and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.

An apparatus to electrically and optically characterize a multijunction solar cell. The apparatus can have as many light sources as there are subcells in the multijunction solar cell. Each light source has an optical spectrum that falls within the bandgap energy of a corresponding subcell. Each light source has a controllable intensity level.

A monolithic semiconductor photovoltaic solar cell comprising a plurality of subcells disposed in series on an electrically conductive substrate. At least one subcell of the plurality of subcells includes an epitaxially grown self-assembled quantum dot material. The subcells are electrically connected via tunnel junctions. Each of the subcells has an effective bandgap energy. The subcells are disposed in order of increasing effective bangap energy, with the subcell having the lowest effective bandgap energy being closest to the substrate. In certain cases, each subcell is designed to absorb a substantially same amount of solar photons.

A laser system includes a laser diode with a low dimensional nanostructure, such as quantum dots or quantum wires, for emitting light over a wide range of wavelengths. An external cavity is used to generate laser light at a wavelength selected by a wavelength-selective element. The system provides a compact and efficient laser tunable over a wide range of wavelengths.

Growing community of inventors

Ottawa, Canada

Simon Fafard