Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Trixell

Isorg

Simon Charlot

Jean-Marie Verilhac

Mohammed Benwadih

Pierre Rohr

Jean-Yves Laurent

Anis Daami

Marie Heitzmann

Jamal Tallal

Jérôme Joimel

Emeline Berthod

A matrix-array optoelectronic device includes a substrate on which a matrix array of what are called bottom electrodes is deposited; an active structure, which is preferably continuous and organic, arranged above the matrix-array of bottom electrodes, the structure being suitable for detecting light; and at least one what is called top electrode lying above the active structure, the top electrode being transparent to the light emitted or detected by the active structure; and at least one conductive element that is borne by the substrate without interposition of the active structure and that is connected to the top electrode by at least one vertical interconnection, the conductive element having an electrical conductivity greater than that of the top electrode. The device may also comprise a layer made of scintillator material, the layer being fastened to the top electrode, so as to form an x-ray imager.

Optoelectronic array device having an upper transparent electrode

A matrix-array detecting device including a stack comprising a matrix array of detecting-element pixels, and an active matrix array comprising a network of rows and columns for controlling the pixels and produced on the surface of a substrate, wherein the detecting-element pixels comprise: a common top electrode; a detecting layer; and discrete bottom electrodes; the device comprising a metallic mesh that is connected to the top electrode; that includes pads comprising at least one metal portion, the pads being incorporated into the detecting layer; and that is positioned in correspondence with the network of controlling rows and columns. A process for fabricating the matrix-array detecting device is also provided.

Matrix detection device incorporating a metal mesh in a detection layer, and manufacturing method

A method for producing a stack, includes the following steps: forming a first layer able to conduct electricity, forming a layer of interest on the first layer, the layer of interest comprising at least one free volume, forming at least one repairing element, each repairing element at least partially filling a free volume, called the free volume of interest, the repairing element comprising at least one insulating layer and leaving free an upper surface of the layer of interest opposite the first layer located outside of the at least one free volume, forming a second layer, able to conduct electricity, on the layer of interest, the second layer covering the repairing element and the free surface, the step of forming the repairing element comprising the following steps: forming, on the layer of interest, a layer that extends at least partially into the free volume of interest, covering at least one portion of the buffer layer located in the volume of interest with a filling layer, the buffer layer and the filling layer being made from different materials.

Method for forming a stack and stack

An optoelectronic device includes a stack of layers that are arranged on an electrically insulating substrate, including at least one cathode made of a material of work function &#x3a6;; one electron-collecting layer that is arranged above the cathode and that is made of a material of work function &#x3c6;and of sheet resistance R; and one active layer comprising at least one p-type organic semiconductor the energy level of which is HO1, wherein the work function &#x3c6;of the electron-collecting layer and the energy level HO1 of the active layer form a potential barrier able to block the injection of holes from the cathode into the active layer; and the sheet resistance R of the electron-collecting layer is higher than or equal to 10&#x3a9;.

Organic optoelectronic device, array of such devices and method for producing such arrays

A process for producing a stack of a first electrode/active layer/second electrode, which stack is intended for an electronic device, in particular an organic photodetector or an organic solar cell, the process comprises the following steps: (a) depositing a first conductor layer on the front side of a substrate, in order to form the first electrode; and (b) depositing an active layer taking the form of a thin organic semiconductor layer, this layer including discontinuous zones; wherein this process further comprises the following steps: (d) depositing a resist layer on that side of the stack which is opposite the substrate, which is at least partially transparent; (e) exposing the resist layer via the back side of the substrate; (f) developing the resist layer; and (g) depositing a second conductor layer in order to form the conductive second electrode.

Method for producing a first electrode/active layer/second electrode stack

A method of making a stack of the type comprising a first electrode, an active layer, and a second electrode, for use in an electronic device, in particular of the organic photodetector type or the organic solar cell type, the method comprising the following steps:

Method of making a stack of the type comprising a first electrode, an active layer, and a second electrode

A method of structuring an active organic layer deposited on a substrate, including depositing a sacrificial layer on the substrate by photolithography, the sacrificial layer being made of at least one resist, creating at least one pattern inside of the sacrificial layer, depositing an active organic layer on the sacrificial layer and in the pattern, depositing a protective layer made of organic polymer on the active layer and in the pattern of the resist sacrificial layer, removing the sacrificial layer by projection of a solvent on the resin forming the layer, and removing the protective layer by dissolving the polymer forming it in a solvent.

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Grenoble, France

Simon Charlot