Samsung Electronics Co., Ltd.

Seagate Technology Incorporated

Seagate Technology International

Simon Buehlmann

Seung-bum Hong

Ju-Hwan Jung

Yong-kwan Kim

Eun-Joo Jang

Shin-Ae Jun

Seung Bum Hong

Sung-hoon Choa

Hyoung-soo Ko

Ji Yoon Kim

Jin-Gyoo Yoo

Sung Hoon Choa

Yun Seok Kim

Sung-hoond Choa

Kwang Soo No

Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.

Information storage medium using nanocrystal particles, method of manufacturing the information storage apparatus including the information storage medium

Information storage medium using nanocrystal particles, method of manufacturing the information storage medium, and information storage apparatus including the information storage medium

A method of manufacturing patterned ferroelectric media, which includes forming an electrode on a substrate; forming features having a predetermined pattern on the electrode, the features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. Also disclosed is a method which includes forming on a substrate an electrode having wells and precursor features formed in the wells of the electrode, the precursor features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. The above first embodiment relates to non-embedded type media, and the above second embodiment relates to embedded type media.

Method of manufacturing patterned ferroelectric media

A ferroelectric medium, a manufacturing method thereof and an information storage device are disclosed. The manufacturing method includes the steps of: forming an electrode layer on a substrate; forming an insulation layer on the electrode; and forming on the insulation layer a ferroelectric layer. Dielectric breakdown does not occur at a high voltage by forming the insulation layer.

Ferroelectric media manufacturing method thereof and information storage device using the same

Provided are a ferroelectric recording medium and a method of manufacturing the same. The ferroelectric recording medium includes a substrate, a plurality of supporting layers which are formed on the substrate, each of the supporting layers having at least two lateral surfaces; and data recording layers formed on the lateral surfaces of the supporting layers. First and second data recording layers may be respectively disposed on two facing lateral surfaces of each of the supporting layers. The supporting layers may be polygonal pillars having at least three lateral surfaces. A plurality of the supporting layers can be disposed at uniform intervals in a two-dimensional array.

Ferroelectric recording medium and method of manufacturing the same

An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.

Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same

A method of recording bits on a ferroelectric medium using a scanning probe or a small conductive structure and a recording medium thereof, in which bit sizes can be decreased to increase data recording density as well as to reduce losses in reproduction signals. The method includes applying switching voltages to a lower electrode of the ferroelectric medium and the probe so as to write bits while approaching the probe to or bringing the probe into contact with a surface of the ferroelectric medium; and applying a base bias voltage, which is equal or smaller in magnitude and opposite in sign to the switching voltages between the switching voltages to make the probe equipotential with an upper portion of the record medium.

Bit recording process on ferroelectric medium using probe or small conductive structure and recording medium thereof

Ferroelectric recording medium

A method of manufacturing a ferroelectric thin film with good crystallinity and improved surface roughness includes: forming on a substrate a metal nitride-based precursor layer containing one selected from the group consisting of TiN, ZrTiN (0&#x3c;x&#x3c;1), FeN, and NbN; forming on the metal nitride-based precursor layer a mixed gas atmosphere containing oxygen (O) and one reactive gas selected from the group consisting of PbO(g), BiO(g), and KO(g); annealing the metal nitride-based precursor layer in the mixed gas atmosphere and forming a ferroelectric thin film containing one selected from the group consisting of PbTiO, PbZrTiO(0&#x3c;x&#x3c;1), BiTiO, BiTiO, BiFeO, and KNbO.

Method of manufacturing ferroelectric thin film for data storage and method of manufacturing ferroelectric recording medium using the same method

An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.

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Yongin-si, South Korea

Simon Buehlmann