International Business Machines Corporation

Simon Brandl

Martin Bernhard Schmidt

Harry S Barowski

Alexander Fritsch

Wolfgang Penth

Werner Juchmes

Circuit analysis and modification by receiving a first description of a circuit, the first description having a first level of detail, receiving a second description of the circuit, the second description having a second level of detail, performing a circuit simulation according to the first description, identifying an active node of the first description according to the simulation, and modifying the second description according to the active node.

Analysis and modification of circuit designs

A memory cell arrangement for Random Access Memory (RAM) including one or more RAM cell groups. The RAM cell groups having two or more local bit-lines sharing a Global Bit-Line (GBL), a pre-charging circuit connected to the GBL, a multiplexer connected to multiple GBLs and configured to shift an output of a first GBL from a first bit to a second bit at least in part according to a value of a fuse bit register associated with a second GBL, and at least one pre-charge enabling circuit controlled by a combination of a pre-charge input value applied to all GBLs of the memory cell arrangement and a pre-charge enable signal for the GBL.

Growing community of inventors

Stuttgart, Germany

Simon Brandl