Plessey Semiconductors Limited

Simon Ashton

Andrea Pinos

Samir Mezouari

Wei Sin Tan

Xiang Yu

Jonathan Shipp

Jun Youn Kim

A method of forming a Light Emitting Diode (LED) precursor comprising: forming a first semiconducting layer comprising a Group III-nitride on a substrate, selectively removing a portion of the first semiconducting layer to form a mesa structure, and forming a monolithic LED structure. According to the method, the first semiconducting layer has a growth surface on an opposite side of the first semiconducting layer to the substrate. According to the method, the first semiconducting layer is selectively removed to form the mesa structure such that the growth surface of the first semiconducting layer comprises a mesa surface and a bulk semiconducting surface. Further, the monolithic LED structure is formed on the growth surface of the first semiconducting layer such that the monolithic LED structure covers the mesa surface and the bulk semiconducting surface, the monolithic LED structure comprising a plurality of layers, each layer comprising a Group III-nitride, including a second semiconducting layer, an active layer provided on the second semiconducting layer, the active layer configured to generate light, and a p-type semiconducting layer provided on the active layer. A potential barrier is provided between a first portion of the p-type semiconducting layer covering the mesa surface and a second portion of the p-type semiconducting layer covering the bulk semiconducting surface. The potential barrier surrounds the first portion of the p-type semiconducting layer covering the mesa surface.

Light Emitting Diode and method of forming a Light Emitting Diode

A Light Emitting Diode (LED) array precursor is provided. The LED array precursor comprises a substrate having a substrate surface, a first LED stack, a p++ layer, a n++ layer and a second LED stack. The first LED stack is provided on a first portion of the substrate surface. The first LED stack comprises a plurality of first Group III-nitride layers defining a first semiconductor junction configured to output light having a first wavelength wherein a n-type side of the first semiconductor junction is orientated towards the substrate surface. The p++ layer is provided on the first LED stack, the p++ layer comprising a Group III-nitride. The n++ layer has a first portion covering the p++ layer of the first LED stack and a second portion covering a second portion of the substrate surface, wherein a tunnel junction is formed at an interface between the n++ layer and the p++ layer, the n++ layer comprising a Group III-nitride. The second LED stack is provided on the second portion of the n++ layer covering the second portion of the substrate surface. The second LED stack comprises a plurality of second Group III-nitride layers defining a second semiconductor junction configured to output light having a second wavelength different to the first wavelength, wherein a n-type side of the semiconductor junction is provided towards the n++ layer. A method of manufacturing a LED array precursor is also provided.

LED array and method of forming a LED array

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Plymouth, United Kingdom

Simon Ashton