University of Southampton

University College London

University of Sheffield

Qd Laser, Inc.

Siming Chen

Mitsuru Sugawara

Frederic Yannick Gardes

Alwyn John Seeds

Kenichi Nishi

Richard Hogg

Keizo Takemasa

Huiyun Liu

Takeo Kageyama

A semiconductor device for use in an optoelectronic integrated circuit; the device comprising: a group four substrate, a waveguide, and a group III/V multilayer stack; wherein the group III/V multilayer stack comprises a quantum component for producing light for the waveguide; wherein the waveguide comprises a material with a deposition temperature below 550 degrees Celsius and a refractive index of any value between 1.3 and 3.8.

Optoelectronic semiconductor device

A semiconductor light-emitting element includes: a lower clad layerthat is provided on a substrate; an active layerthat is provided on the lower clad layerand includes a quantum well layerand a plurality of quantum dotssandwiching a second barrier layertogether with the quantum well layer; and an upper clad layerthat is provided on the active layer, wherein a distance D between the quantum well layerand the plurality of quantum dotsis smaller than an average of distances X between centers of the plurality of quantum dots

Semiconductor light-emitting element

Growing community of inventors

London, United Kingdom

Siming Chen