Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Osram Oledgmbh

Simeon Katz

Sophia Huppmann

Marcus Zenger

Dominik Scholz

Markus Maute

Martin Mandl

Roland Zeisel

Mathias Wendt

Kai Gehrke

Andreas Rueckerl

Berthold Hahn

Siegfried Herrmann

Matthias Sabathil

Korbinian Perzlmaier

Karl Engl

Christian Leirer

Joachim Hertkorn

Johannes Baur

Andreas Ploessl

Matthias Peter

Tobias Meyer

Alexander Linkov

Werner Bergbauer

Martin Strassburg

Andreas Weimar

Jürgen Off

Philipp Drechsel

Lorenzo Zini

Jens Mueller

Kurt Hingerl

Christopher Koelper

Bastian Galler

Rainer Hartmann

Andreas Rückerl

Massimo Drago

Rolf Aidam

Holger Specht

Marika Hirmer

Jürgen Däubler

Thorsten Passow

Michael Hoenle

Thorsten Wagner

Pascal Porten

In an embodiment a method includes arranging a first semiconductor wafer above a carrier, wherein the first semiconductor wafer includes a plurality of first semiconductor optoelectronic components, separating a plurality of the first components from the first semiconductor wafer by laser radiation so that the first components fall onto the carrier and attaching the first components separated from the first semiconductor wafer to the carrier, wherein regions of the first semiconductor wafer between adjacent first components are thinned and the first components are covered with a passivation layer before the first components are separated from the first semiconductor wafer.

Method for manufacturing an optoelectronic light emitting device

In an embodiment, an adhesive stamp includes a plurality of variable-length stamp bodies arranged in an array, wherein each stamp body has an adhesive surface on a head portion of the stamp body, the adhesive surface configured to hold a semiconductor chip, wherein a first electrode is arranged in the head portion, wherein the first electrode is chargeable and whose polarity is changeable, wherein a second electrode is arranged in a foot portion of the stamp body, wherein the second electrode is chargeable and whose polarity is changeable, wherein a length of the stamp body is variable depending on charges applied to the first electrode and the second electrode, and wherein the adhesive stamp is configured to transfer semiconductor chips.

Method for transferring missing semiconductor chips using an adhesive stamp

A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.

Method for producing a connection between component parts, and component made of component parts

The method of producing an electronic component () comprises a step A) of providing a semiconductor chip () having an underside (), having a plurality of contact pins (), and having at least one positioning pin () protruding from the underside. The contact pins are adapted to electrically contact the semiconductor chip. The positioning pin narrows in the direction away from the underside and protrudes further from the underside than the contact pins. The semiconductor chip is placed on the connection carrier, with the contact pins each being inserted into a contact recess and the positioning pin being inserted into the positioning recess. The contact pins are immersed in the molten solder material.

Method for producing an electronic component, wherein a semiconductor chip is positioned and placed on a connection carrier, corresponding electronic component, and corresponding semiconductor chip and method for producing a semiconductor chip

In an embodiment a method includes providing the first component part with a partially exposed first insulating layer, a plurality of first through-vias and an exposed first contact layer structured in places and planarized in places, wherein the first through-vias are each laterally enclosed by the first insulating layer, and wherein the first contact layer partially covers the first insulating layer and completely covers the first through-vias; providing the second component part with a partially exposed second insulating layer, a plurality of second through-vias and an exposed second contact layer structured in places and planarized in places, wherein the second through-vias are each laterally enclosed by the second insulating layer, and wherein the second contact layer partially covers the second insulating layer and completely covers the second through-vias and joining the component parts such that the contact layers overlap each other thereby mechanically and electrically connecting the component parts to each other by a direct bonding process at the contact layers.

Method for producing a connection between component parts

In an embodiment a method includes forming a semiconductor layer sequence on a growth substrate, applying a silicon oxide layer to a surface of the semiconductor layer sequence facing away from the growth substrate, applying a first metal layer to the silicon oxide layer, wherein the first metal layer includes gold, platinum, copper or silver, providing a silicon substrate and applying a second metal layer formed of the same material as the first metal layer to the silicon substrate, bonding the semiconductor layer sequence to the silicon substrate by direct bonding of the first metal layer to the second metal layer, wherein the first metal layer and the second metal layer are brought into contact at a temperature in a range of 150&#xb0; C. to 400&#xb0; C. so that they form a metal bonding layer and detaching the growth substrate from the semiconductor layer sequence.

Method of manufacturing a semiconductor device and semiconductor device

A component includes a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition zone, wherein the first active layer is configured to generate electromagnetic radiation of a first peak wavelength and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength, in the vertical direction, the first transition zone is arranged between the first and second semiconductor bodies and is directly adjacent to the first and second semiconductor bodies, the first transition zone includes a radiation-transmissive, at least for the radiation of the first peak wavelength partially transparent and electrically conductive material so that the first semiconductor body electrically conductively connects to the second semiconductor body via the first transition zone, and the first transition zone includes a structured surface or a first partially transparent and partially wavelength-selectively reflective mirror structure.

Component having semiconductor bodies electrically conductively connected via a transition zone

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body with a contact metallization located at a main surface of the semiconductor body, a protective layer partially covering the semiconductor body and the contact metallization, a substrate firmly bonded to the semiconductor body at the main surface, a recess and a terminal layer arranged within the recess, wherein the recess and the terminal layer extend from a side of the substrate facing away from the semiconductor body through the substrate and the protective layer up to the contact metallization, and wherein the terminal layer electrically contacts the contact metallization and a connection layer located between the substrate and the semiconductor body, the connection layer including a first region and a second region, wherein the first region is bonded together with the second region without using a bonding agent.

Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component

The invention relates to a method for producing a plurality of components (), wherein a carrier composite () is provided with a coherent base body () and a wafer composite () is provided with a coherent semiconductor body composite () and a substrate (). The wafer composite is connected to the carrier composite to form a common composite. In a subsequent method step, a plurality of separation channels () are generated at least through the base body () to form a grid structure (), which determines the dimensions of the components () to be produced. A passivation layer () is shaped in such a way that it covers the side surfaces of the separation channels (). Finally, the common composite is separated, wherein the substrate () is removed from the semiconductor body composite () and the common composite is separated along the separation channels () to form a plurality of components ().

Method for producing a plurality of components

The invention relates to a method for structuring a nitride layer (), comprising the following steps: A) providing a nitride layer () formed with silicon nitride of a first type, B) defining regions () of said nitride layer () to be transformed, and C) inserting the nitride layer () into a transformation chamber for the duration of a transformation period, said transformation period being selected such that&#x2014;at least 80% of the nitride layer () regions () to be transformed are transformed into oxide regions () formed with silicon oxide, and&#x2014;remaining nitride layer () regions () remain at least 80% untransformed.

Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

An optoelectronic device () comprising a semiconductor body () having an optically active region (), a carrier (), and a pair of connection layers () having a first connection layer () and a second connection layer (), wherein:

Optoelectronic component and method for producing an optoelectronic component

A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.

Method for producing an optoelectronic semiconductor device and optoelectronic semiconductor device

A method for producing a plurality of components and a component are disclosed. In an embodiment the method includes providing a carrier composite comprising a base body and a planar connecting surface, providing a wafer composite comprising a semiconductor body composite and a planar contact surface, connecting the wafer composite to the carrier composite thereby forming a joint composite so that the planar contact surface and the planar connecting surface are joined forming a joint boundary surface. The method further includes reducing inner mechanical stress in the joint composite so that a material of the carrier composite is removed in places, wherein the joint composite is thermally treated in order to form a permanent mechanically-stable connection between the wafer composite and the carrier composite, and wherein reducing inner stress is effected prior to the thermal treatment.

Method for producing a plurality of components, and component

An optoelectronic semiconductor chip includes an active region arranged between a first semiconductor layer and a second semiconductor layer and generates or receives electromagnetic radiation, the first semiconductor layer electrically conductively connects to a first contact, the first contact is formed on a front side of the chip next to the active region, the second semiconductor layer electrically conductively connects to a second contact, the second contact is arranged on the front side of the chip next to the active region, and an electrically insulating separating layer that electrically insulates a rear side of the chip from the active region of the semiconductor chip, and an electrically insulating separating layer includes at least one first separating layer having at least one atomic layer or at least one molecular layer and is deposited by atomic layer deposition or molecular layer deposition.

Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

Growing community of inventors

Wuppertal, Germany

Simeon Katz