Lpe S.p.a.

Denso Corporation

Silvio Preti

Vincenzo Ogliari

Maurilio Meschia

Franco Preti

Francesco Corea

Danilo Crippa

Yuichiro Tokuda

Michele Forzan

Gianluca Cividini

The reaction chamber (A) is used for a reactor for the deposition of semiconductor material on a substrate (); it extends in a longitudinal direction and comprises a reaction and deposition zone () which extends in the longitudinal direction; this zone () is defined by susceptor elements (A,B,C,A,B,) adapted to be heated by electromagnetic induction; a first susceptor element (A,B,C,A,B) is opposite to a substrate support element () of the chamber and has a hole () which extends in the longitudinal direction along its whole length; the first susceptor element (A,B,C,A,B) has a non-uniform cross section that depends on its longitudinal position.

Reaction chamber for an epitaxial reactor of semiconductor material with non-uniform longitudinal section and reactor

The reaction chamber () is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube () made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis () is vertical; the tube () has a cylindrical inner interspace () which extends along the entire length of the tube () and which is adapted to accommodate a flowing liquid; the chamber () further comprises an annular closing element () made of quartz and fixed to a first lower end of the tube () so as to close the interspace () preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element () has an annular recess () facing the interspace () so that the flowing liquid can reach the recess () at the bottom; the chamber () further comprises a set of internal conduits () internal to the interspace (), wherein said internal conduits () extend from the first lower region of the tube () till a second upper region of the tube () to facilitate circulation of the flowing liquid in the interspace ().

Reaction chamber for a deposition reactor with interspace and lower closing element and reactor

The method serves for depositing a layer of silicon carbide with n-type doping onto a surface of a substrate placed horizontally on a rotating susceptor inside a reaction chamber by means of a CVD type process; the rotating susceptor is adapted to single-substrate support; the method includes introducing and flowing a gaseous mixture internally along the reaction chamber from a first side to a second side passing over a portion of a lower wall of said reaction chamber and then over said rotating susceptor supporting one substrate; the gaseous mixture comprises or consists of: one or more gases being precursor of silicon carbide to be deposited and a carrier gas and a precursor gas containing a substance adapted to give rise to n-type doping; the dopant substance is adapted to be subjected to pyrolysis catalysed by contact with an internal surface made of silicon carbide of said reaction chamber forming species with stoichiometry NHxCySiz where x and y and z are comprised between 0 and 3 and x+y+z>0, the reaction chamber is at a temperature comprised in the range between 1450° C. and 1800° C. and at a pressure comprised in the range between 5 kPa and 30 kPa; the substrate is placed inside the reaction chamber in a region where trends in availability respectively of Si, C and N are all decreasing and where temperature is within a deposition temperature range.

Method for CVD deposition of n-type doped silicon carbide and epitaxial reactor

The device () is for supporting substrates in a reaction chamber of an epitaxial reactor; it comprises: a disc-shaped element () having a first face (A) adapted to be upperly positioned when the device () is being used and a second face (B) adapted to be lowerly positioned when the device () is being used, said disc-shaped element () being adapted to receive a gas flow (F) to rotate the device () about an axis (X) thereof, a substrate-supporting element () in a single piece with said disc-shaped element () and preferably adjacent to said first face (A), and a shaft () coaxial to said disc-shaped element (), in a single piece with said disc-shaped element () and having a first end (A) at said second face (B); said shaft () has at a second end (B) thereof at least a protrusion (A,B,C) whose rotation is adapted to be detected by a pyrometer () or a thermographic camera.

Substrate support device for a reaction chamber of an epitaxial reactor with gas flow rotation, reaction chamber and epitaxial reactor

The present invention relates to a heating method for a reactor () for epitaxial deposition; the reactor () comprises a susceptor () and an inductor (); the inductor () is adapted to heat the susceptor () by electromagnetic induction when it is electrically powered; the inductor () comprises a plurality of turns (-); during heating of the susceptor () from a first temperature to a second temperature, the position of one or more turns () of the inductor () with respect to the susceptor () and to the other turns of the inductor () is changed. The turns () are actuated by means of an appropriate actuation system ().

Reactor for epitaxial deposition with a heating inductor with movable turns

The present invention relates to a reactor () for epitaxial deposition of semiconductor material on substrates (), comprising: a reaction chamber () provided with a cavity () defined by a lower wall (), an upper wall () and lateral walls (); a susceptor (), positioned inside said cavity (), and adapted to support and heat substrates () during epitaxial deposition; a heating system () adapted to heat said susceptor (); an upper plate () that is positioned above said upper wall () and that overlies said susceptor () so that it reflects thermal radiation emitted by said susceptor () towards said susceptor (). A liquid flow (LF) is provided in or on said upper plate () to cool said upper plate (). A gaseous flow (GF) is provided between said upper wall () and said upper plate () to promote the transfer of heat from said upper wall () to said upper plate ().

Epitaxial deposition reactor with reflector external to the reaction chamber and cooling method of a susceptor and substrates

The susceptor for an epitaxial deposition reactor comprises a disc-shaped portion () which is adapted to be placed horizontally and which at the top has at least one cylindrical pocket () where a substrate () to be subjected to an epitaxial deposition process is placed; the pocket () has a bottom; one or more conduits () fluidically connected to an intake system () open on the bottom of the pocket (); when a substrate () is placed on the bottom of the pocket () and the intake system () is active, the substrate () remains adhering to the bottom of the pocket (). In particular: the upper body) superiorly has the pocket (), the conduits () vertically cross only the upper body (), the conduits () are fluidically connected to a plenum () located between the lower body () and the upper body () below the pocket (), the plenum () is fluidically connected to the intake system (); whereby when a substrate () is placed on the bottom of the pocket () and the intake system () is active, the lower body () and the upper body () remain united.

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Baranzate, Italy

Silvio Preti