Infineon Technologies Ag

Silvia Solda

Fabrizio Cortigiani

Franco Mignoli

Gianluca Ragonesi

Cristian Garbossa

Luca Scandola

Roberto Filippo

Michele Bergo

Alberto Arpino

Ozan Serpedin

Vlad Alexandru Mircea Ionescu

Bogdan Dimitriu

Dario Cappuzzo

Paola Lops

In some examples, a device includes a selector circuit configured to deliver power to a first driver circuit, where the first driver circuit is configured to activate and deactivate a first switch of a postregulator. The device also includes a startup regulator and a controller configured to cause the selector circuit to deliver power from the startup regulator to the first driver circuit. The controller is also configured to determine that a boost regulator is operational after delivering power from the startup regulator to the first driver circuit. The controller is further configured to cause the selector circuit to deliver power from the boost regulator to the first driver circuit in response to determining that the boost regulator is operational.

Power delivery to a driver circuit in a postregulator

A method controls a power MOS transistor having a control terminal and a load path, the load path connected in series with a load between voltage supply terminals, wherein a power supply voltage between the voltage supply terminals imposes a load voltage across the load and a load path voltage across the load path of the power MOS transistor. The method includes generating a control current for the control terminal during a switching process when the power MOS transistor changes switching states. The control current is dependent on the power supply voltage and on at least one of the group consisting of the load path voltage and the load voltage.

Low EMC/EMI emissions' gate driver for wide supply voltage ranges

Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction.

Power transistor and method for controlling a power transistor

A circuit includes a MOS transistor having a control electrode and a control capacitance, and including a control circuit for the MOS transistor. The control circuit includes an input to supply a control signal and an output to supply a drive signal, the output being connected to the control electrode of the MOS transistor. A calibration circuit is connected to the control electrode of the MOS transistor, and generates a calibration signal dependent on the capacitance value of the control capacitance. A drive circuit generates the drive signal with an amplitude dependent on the calibration signal as determined by the control signal.

Circuit comprising a MOS transistor and a control circuit for the MOS transistor

An interface circuit includes an input terminal, a controlled current sink, a current measurement arrangement, and a logic circuit. The input terminal is configured to receive an input signal. The controlled current sink is operably coupled to the input terminal, and is operable to controllably take up a current from the input terminal according to a transmission signal. The current measurement arrangement is configured to generate a current measurement signal based on the current taken up by the current sink. The logic circuit is operably coupled to receive the current measurement signal and the input signal, and is configured to generate a signal depending on the input signal.

Input/output interface with current sensing

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Padua, Italy

Silvia Solda