Yangtze Memory Technologies Co., Ltd.

Siliu Zhang

Zongliang Huo

Wei Xu

Yali Guo

Simin Liu

Bin Chen

Jie Su

The present disclosure discloses a three-dimensional memory and a fabrication method thereof. The fabrication method comprises: forming a stack structure comprising alternately stacked dielectric layers and sacrificial layers; forming a gate line slit penetrating vertically penetrating the stack structure and extending in a first horizontal direction; and etching portions of the dielectric layers and the sacrificial layers adjacent to the gate line slit to form a plurality of recesses, wherein an aperture of each recess in a vertical direction is greater than a thickness of a corresponding sacrificial layer.

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Wuhan, China

Siliu Zhang