Northrop Grumman Systems Corporation

University of Pennsylvania

The Penn State Research Foundation

Northrup Grumman Corp.

Silai V Krishnaswamy

Carl Baldwin Freidhoff

Jeffrey David Hartman

Joseph A Payne

Nathan Bluzer

Aaron A Pesetski

John D Adam

Gianluca Piazza

Rowland C Clarke

Monica P Lilly

Wayne Stephen Miller

Philip C Smith

Susan Trolier McKinstry

Euniki Hong

Erica C Elvey

A radio-frequency (RF) carbon-nanotube (CNT) field effect transistor (FET) device. The device includes a source contact, a drain contact, semi-conducting CNTs positioned between the source and drain contacts, high-&#x3ba; gate dielectric, and a local backgate positioned below the semi-conducting CNTs, in which the local backgate is capable of RF performance and is capable of being used in a backgate burnout process used to enhance the semiconducting to metallic tube ratio of the device.

Radio-frequency carbon-nanotube field effect transistor devices with local backgates and methods for making same

A bulk acoustic resonator assembly and methods for fabricated the resonator assembly is provided. The resonator includes a cavity on a first surface of a substrate, with a sheet of low acoustic loss material suspended over the cavity. The sheet of low acoustic loss material is configured such that an associated fundamental frequency of the sheet of low acoustic loss material is a function of a length of the sheet of low acoustic loss material in a direction parallel to the first surface of the substrate. A transducer includes an electromechanical layer on the sheet of low acoustic loss material and a patterned conductive material formed on the electromechanical material. The transducer is configured to induce vibrations in the low acoustic loss material upon application of an electrical signal to the conductive pattern.

Lateral over-moded bulk acoustic resonators

Embodiments of a method and apparatus for removing metallic nanotubes without transferring CNTs from one substrate to another substrate provide two methods of transferring a thin layer of crystalline ST-cut quartz wafer to the surface of a carrier silicon wafer for subsequent CNT growth, without resorting to CNT transfer. In other words, embodiments of a method and apparatus allow CNTs to be grown on the same substrate that metallic nanotube removal is performed, therefore eliminating the costly and messy step of transferring CNTs from one substrate to another. This is achieved through a residual thin layer of crystalline ST-cut quartz layer on a silicon wafer. The ST-cut quartz wafer promotes aligned growth of CNTs, while the underlying silicon wafer allows backgate burnout.

Method and apparatus for removing metallic nanotubes without transferring carbon nanotubes from one substrate to another substrate

A method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements. Such a system may embody a bolometer, which is well suited for detecting electromagnetic radiation between 90 GHz and 30 THz while operating at room temperature. The method also discloses a generalized process for manufacturing circuitry incorporating active and passive micro-electrical-mechanical systems in a silicon wafer.

Method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements

The present invention provides a MEMS piezoelectric switch that has an articulated unimorph bridge attached to a substrate. The bridge includes a passive layer of zirconia and at least one silicon-based material, an active layer of a piezoelectric material that has a high piezoelectric coefficient, at least one pair of interdigitated electrodes, disposed on the top surface of the active layer and across which the bias voltage is applied, and a top contact electrode. A bottom contact electrode is provided on the substrate, and signals flow through the switch when the top and bottom contact electrodes contact one another.

MEMS piezoelectric switch

An apparatus and a method for steering optical frequency beams using nanowire. A method includes providing one or more nanowire waveguide arrays, generating an optical frequency beam, wherein the optical frequency beam is incident on the one or more nanowire waveguide arrays, controlling the one or more nanowire waveguide arrays to produce a phase delay in the optical frequency beam as it traverses the nanowire waveguide array, wherein the phase delay causes the optical frequency beam to deflect upon exiting the one or more nanowire waveguide arrays, and steering the optical frequency beam exiting the one or more nanowire waveguide arrays by increasing or decreasing the phase delay, wherein the angle of deflection of the exiting optical frequency beam is determined by the amount of phase delay.

System and method for optical beam steering using nanowires and method of fabricating same

The disclosed invention relates to achieving micromachined piezoelectrically-actuated diaphragms. The piezoelectric diaphragm includes a central, inactive electrode free region and an annular shaped interdigitated electrode adjacent to the outer periphery of the central region. The diaphragm also may have an inactive annular, electrode free region and an active central, interdigitated electrode region. The diaphragms may be used in, such as, miniature pumps. The pumps may include a plurality of chambers to generate peristaltic pumping of fluids.

IDT electroded piezoelectric diaphragms

First and second semiconductor wafers are bonded together, with at least one of the wafers having a first layer of silicon, an intermediate oxide layer and a second layer of silicon. The first silicon layer is initially mechanically reduced by around 80% to 90% of its thickness. The remaining silicon layer is further reduced by a plasma etch which may leave an uneven thickness. With appropriate masking the uneven thickness is made even by a second plasma etch. Remaining silicon is removed by a dry etch with XeF2 or BrF3 to expose the intermediate oxide layer. Prior to bonding, the semiconductor wafers may be provided with various semiconductor devices to which electrical connections are made through conducting vias formed through the exposed intermediate oxide layer.

Growing community of inventors

Monroeville, PA, United States of America

Silai V Krishnaswamy