Samsung Electronics Co., Ltd.

Sil Wan Chang

Song Ho Yoon

Seungho Lim

Woonhyug Jee

Jea-Young Kwon

Jae-Kun Lee

Hwan Mook Kim

Eun Jin Yun

Eun-Jin Yun

Young-Jin Park

Dong Gi Lee

Seontaek Kim

Jaesub Kim

In Hwan Doh

Sangyoon Oh

Sang Kyoo Jeong

Hyun-Sik Yun

Heechul Chae

Jong Youl Lee

Yu-Hun Jun

Byung Gook Kim

Bum Seok Yu

Jae Young Kwon

A storage system may include a memory device including a first region including a single-level cell and a second region different from the first region, and a storage controller configured to read data from the first region at a first gear level of a plurality of gear levels, determine an error level of the read data and a state of the memory device, and change the first gear level to a second gear level of the plurality of gear levels based on the determined error level of the data and the determined state of the memory device.

Storage controller for selecting a gear level of a storage device and storage system including the same

A storage device is provided. The storage device includes a memory device including a memory cell array configured to store metadata and main data and a storage controller configured to access the memory device and control the memory device, wherein the storage controller is configured to read data from the memory device at a speed adaptively varying to a first read speed or a second read speed according to a state of the memory device, the second read speed being faster than the first read speed.

Storage device and operating method thereof

A storage device may include, at least one memory device including at least a first single-level cell (SLC) region, a second SLC region, and at least one multi-level cell (MLC) region, the first SLC region having a higher data read speed than the second SLC region, and the second SLC region having a higher data read speed than the at least one MLC region, and a storage controller configured to control the migration of data among the first SLC region, the second SLC region, and the at least one MLC region.

Storage controller and storage device including the same

A data storage device and a method of operating the same are provided. The data storage device includes a first non-volatile memory device, a second non-volatile memory device, and a management module. The management module receives a multi-access command including first and second physical addresses which are different from each other from a host, generates and sends a first access command including the first physical address to the first non-volatile memory device, and generates and sends a second access command including the second physical address to the second non-volatile memory device. The data storage device performs the first and second access commands on the first and second physical addresses, respectively.

Method of accessing a data storage device using a multi-access command

An operation method of a memory controller which is configured to control a nonvolatile memory device includes receiving a command from the outside, calculating a delay time based on a currently available write buffer, a previously available write buffer, and a reference value, and processing the command based on the delay time.

Operation method of memory controller and operation method of storage device including the same

A data storage device and a method of operating the same are provided. The data storage device includes a first non-volatile memory device, a second non-volatile memory device, and a management module. The management module receives, from a host, an external multi-access command including first and second physical addresses which are different from each other, generates and sends a first access command including the first physical address to the first non-volatile memory device, and generates and sends a second access command including the second physical address to the second non-volatile memory device. The data management module performs operations on the first and second non-volatile memory devices based on the first and second access commands and the first and second physical addresses, respectively. The data storage device may be a solid state drive (SSD) including NAND flash memory, and the multi-access command may be a multi-write, multi-read, or multi-erase command.

Data storage device and method including receiving an external multi-access command and generating first and second access commands for first and second nonvolatile memories

A method of operating a data storage device in which a nonvolatile memory is included and a mapping table defining a mapping relation between a physical address and a logical address of the nonvolatile memory is stored in a host memory buffer of a host memory includes requesting a host for an asynchronous event based on information about a map miss that the mapping relation about the logical address received from the host is not included in the mapping table, receiving information about the host memory buffer adjusted by the host based on the asynchronous event, and updating the mapping table to the adjusted host memory buffer with reference to the information about the host memory buffer. A method of operating a data storage device according to example embodiments of the inventive concept can reduce the number of map misses or improve reliability of a nonvolatile memory.

Data storage device using host memory and method of operating same

A semiconductor device includes a memory cell array including a first memory region and a second memory region; a plurality of register sets for storing a plurality of parameter sets; and a control logic circuit configured to, activate a first register set among the plurality of register sets in response to a selection signal, and perform an access operation on the first memory region using a parameter set stored in an activated register set from among the plurality of register sets.

Semiconductor device having register sets and data processing device including the same

An operation method of a storage device, which is connected to a host through an interface sharing a memory buffer of the host, includes receiving an access command from the host, anticipating data that is expected to be requested by the host with reference to the access command, reading out the anticipated data from a nonvolatile memory device and loading the read data to a first area of the memory buffer, and in a case of being requested to load the anticipated data into a second area of the memory buffer by the host, moving the anticipated data from the first area to the second area.

Storage device and method of operating the same

The solid state drive device includes a memory device including a plurality of flash memories and a memory controller connected with a host and configured to control the memory device. The memory controller includes first and second cores, a host interface configured to interface with the host, and a flash memory controller configured to control the plurality of flash memories. The first core is configured to control transmission and reception of data to and from the host. The second core is configured to control transmission and reception of data to and from the memory device.

Solid state drive device

A method of updating firmware that is included in a memory apparatus that includes first and second volatile memories and a non-volatile memory, can be provided by storing new firmware in the second volatile memory when old firmware is loaded into the first volatile memory and determining on a component basis which of a plurality of components of the old firmware is an updated component in the new firmware.

Memory apparatus and method of updating firmware of the memory apparatus

An error correction device is provided. The error correction device includes a code storage unit where a plurality of error correction codes are stored, a first error correction unit to correct a data error detected from input data by using one of a plurality of error correction codes and to output correction data, a buffer to store the correction data, and a second error correction unit to generate a new correction code from the correction data, to compare another of a plurality of error correction codes with the new correction code and to output a comparison result.

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Yongin-si, South Korea

Sil Wan Chang