Princeton University

Universal Display Corporation

Aegis Semiconductor, Inc.

Parelec, Inc.

Universität Linz

Visible Tech-Knowledgy, Inc.

Sigurd Richard Wagner

Prashant Mandlik

Ruiqing Ma

Lin Han

Julia J Brown

Jeffrey Silvernail

Luke Walski

James Christopher Sturm

Naveen Verma

Helena Gleskova

Matthias Wagner

Bhadrinarayana Lalgudi Visweswaran

Eugene Y Ma

Adam M Payne

Liechao Huang

Yingzhe Hu

Alexander Gelbman

Paul Harriman Kydd

Yu Chen

Zhigang Suo

Siegfried Bauer

Charles Forbes

Christopher Turner

Reinhard Schwödiauer

Jeff Silvernail

Yue Ma

Dashen Shen

Can Wu

Anton A Darhuber

Sandra M Troian

Rabin Bhattacharya

Stephanie Perichon Lacour

Stéphanie Perichon Lacour

Martin Kaltenbrunner

Christoph Keplinger

Ingrid Graz

Branko Glisic

A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

Electronic device with reduced non-device edge area

Systems and methods disclosed herein provide for a passive backscattering beamformer based on large-area electronics (LAE). Low power is critical for distributed nodes in future IoT/5G networks. A key emerging solution is using ubiquitous 2.4 GHz Wi-Fi infrastructure with passive backscattering nodes, for low-power communication. LAE enables monolithic integration of devices over large and flexible substrates, with recent advances into the gigahertz regime opening new opportunities for wireless systems. An LAE passive backscattering beamformer is chosen that is capable of (1) enhancing the backscattered signal power in a scalable manner enabled by LAE's monolithic integrability over meter-scale area; (2) configuration between constructive/destructive beamforming; (3) frequency-shift keying for data modulation and SNR enhancement, by shifting the signal away from the incident interferer; and (4) frequency division multiplexing for increasing data bandwidth.

Passive backscattering beamformer based on large-area electronics

Methods for forming a coating over a surface are disclosed. A method includes directing a first source of barrier film material toward a substrate in a first direction at an angle &#x3b8; relative to the substrate, wherein &#x3b8; is greater than about 0&#xb0; and less than about 85&#xb0;. Additionally, a method of depositing a barrier film over a substrate includes directing a plurality of N sources of barrier film material toward a substrate, each source being directed at an angle &#x3b8;relative to the substrate, wherein for each &#x3b8;, &#x3b8; is greater than about 0&#xb0; and less than about 180&#xb0;. For at least a first of the &#x3b8;, &#x3b8;is greater than about 0&#xb0; and less than about 85&#xb0;, and for at least a second of the &#x3b8;, &#x3b8;is greater than about 95&#xb0; and less than about 180&#xb0;.

Barrier film for electronic devices and substrates

A three dimensional touch sensing system having a touch surface configured to detect a touch input located above the touch surface is disclosed. The system includes a plurality of capacitive touch sensing electrodes disposed on the touch surface, each electrode having a baseline capacitance and a touch capacitance based on the touch input. An oscillating plane is disposed below the touch surface. A touch detector is configured to drive one of the touch sensing electrodes with an AC signal having a frequency that shifts from a baseline frequency to a touch frequency based on the change in electrode capacitance from the baseline capacitance to the touch capacitance. The touch detector is configured to drive the oscillating plane to the touch frequency.

System and method for 3D position and gesture sensing of human hand

A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.

Hybrid layers for use in coatings on electronic devices or other articles

A system and method for interfacing large-area electronics with integrated circuit devices is provided. The system may be implemented in an electronic device including a large area electronic (LAE) device disposed on a substrate. An integrated circuit IC is disposed on the substrate. A non-contact interface is disposed on the substrate and coupled between the LAE device and the IC. The non-contact interface is configured to provide at least one of a data acquisition path or control path between the LAE device and the IC.

System and method for interfacing large-area electronics with integrated circuit devices

Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.

Hybrid dielectric material for thin film transistors

Growing community of inventors

Princeton, NJ, United States of America

Sigurd Richard Wagner