Stmicroelectronics S.a.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Seripress

Sigrid Thomas

Richard P Fournel

Jean-Philippe Poirot-Crouvezier

Cyrille Dray

Marc Belleville

Rodolphe Heliot

Le&iuml;la Aitouarab

Victor Thomas

Didier Bouix

Hervé Buttin

Neuromorphic circuits are multi-cell networks configured to imitate the behavior of biological neural networks. A neuromorphic circuit is provided which comprises a network of neurons each identified by a neuron address in the network, each neuron being able to receive and process at least one input signal and then later emit on an output of the neuron a signal representing an event which occurs inside the neuron, and a programmable memory composed of elementary memories each associated with a respective neuron. The elementary memory, which is a memory of post-synaptic addresses and weights, comprises an activation input linked by a conductor to the output of the associated neuron to directly receive an event signal emitted by this neuron without passing through an address encoder or decoder. The post-synaptic addresses extracted from an elementary memory activated by a neuron are applied, with associated synaptic weights, as inputs to the neural network.

Electronic circuit with neuromorphic architecture

A read-only memory formed of cells, each of which includes, between a selection line and a bit line, the series connection of a memory element and of a selection MOS transistor with a gate connected to a read control line. The memory elements of blank cells are P-channel MOS transistors and the memory elements of programmed cells are uniformly N-type doped semiconductor regions.

Read-only MOS memory

A memory device includes a plurality of memory cells arranged as a matrix. Each memory cell includes a transistor and a capacitor connected in series. Each memory cell is linked to a bit line that connects the memory cells of a column. Each memory cell is also linked to a word line and to a third line. A gate of the transistor of a memory cell is linked to the word line, with each word line being linked to the gates of the transistors in a respective column. A third line is linked to the sources of the transistors of a row of memory cells. A bit line is linked to the capacitors of the transistors of a column. The voltage between the gate and the source of a transistor can thus be controlled via the word column and the third line.

Blowable memory device and method of blowing such a memory

In a device for reading memory cells, a precharging circuit is connected to a memory cell to be read and to a reference cell associated with the memory cell to be read. The precharging circuit precharges the output of the differential amplifier to a predetermined voltage level. The reading device further includes an inverter having a high threshold and a low threshold connected to the output of the differential amplifier. The predetermined voltage level corresponds to an intermediate level between the high and low thresholds.

Memory cell read device with a precharge amplifier and associated methods

A high voltage switching device includes a switching circuit for switching a high voltage to an output line and for providing a control signal. The high voltage switching device also includes a switching transistor connected to the switching circuit for switching a low voltage to the output line based upon the control signal. The output signal is controlled by a control circuit that sets up a control loop between the drop in the gate voltage level of the switching transistor and the voltage level of the output line that is controlled by the switching circuit.

High-voltage switching device and application to a non-volatile memory

A non-volatile memory architecture with a word-based organization includes one selection transistor per word. This selection transistor is used for the selection of the word by the source of the memory cells. In this way, the selection may be done directly by the ouput signals from the address decoders using low voltage. The switching of a high voltage to the gates and the drains of the memory cells is done independently of this selection. This enables the required number of high voltage switches to be reduced.

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Grenoble, France

Sigrid Thomas