Memsor Corporation

Memsmart Semiconductor Corporation

Tsinghua University

Siew-Seong Tan

Li-Ken Yeh

Jen-Chieh Chen

Yung-Jane Hsu

Yi-Hsiang Chiu

Sheng-Hung Li

Cheng-Yen Liu

An integrated low-noise sensing circuit with efficient bias stabilization in accordance with the present invention comprises a first capacitance sensing element, a second capacitance sensing element, a sub-threshold transistor and an amplifier circuit wherein the first stage is an input transistor. The second capacitance sensing element is connected to the first capacitance sensing element. The sub-threshold transistor comprises a body, a gate, a source, a drain, a source-body junction diode and a bulk. The gate forms on top of the body. The source forms on the body and is connected to the first capacitance sensing element and the second capacitance sensing element. The drain forms on the body and is connected to the gate and the amplifier output terminal. The source-body junction diode comprises an anode and a cathode. The anode is connected to the ground.

Integrated low-noise sensing circuit with efficient bias stabilization

A capacitive sensor with a calibration mechanism is provided. The capacitive sensor includes a set of sensing capacitors to generate a capacitance variation, a subtraction circuit and an integration circuit. The subtraction circuit includes a first capacitor array to generate offset-adjusting charges and a second capacitor array to generate subtraction charges according to an initial offset and a sensitivity of the sensing capacitors respectively. The integration circuit includes two input ends, wherein one of them is connected to the sensing capacitors and the subtraction circuit. During a sensing period, the integration circuit performs integration according to the capacitance variation and performs cancellation of the effect of the initial offset according to the offset-adjusting charges to generate an integration output signal that is continuously subtracted by the subtraction charges during a computing period to generate a subtraction count. A capacitive sensing method is disclosed herein as well.

Capacitive sensor having calibration mechanism and capacitive sensing method

A manufacturing method for manufacturing a light-sensing structure is provided. The manufacturing method includes the steps as follows. (a) A circuit layer is formed on an upper surface of a first substrate, wherein the first substrate includes at least one light-sensing device and the circuit layer includes at least one device structure and at least one release feature that is made of metal and is formed on part of the light-sensing device and the device structure. (b) A first light-filtering layer is formed on part of the circuit layer. (c) The release feature is removed by a wet-etching process.

Manufacturing method for light-sensing structure

Disclosed herein is a method for manufacturing a micro-electromechanical structure. The method includes the following steps. A circuitry layer having a release feature is formed on an upper surface of a first substrate. A passive layer is formed on the circuitry layer without covering the release feature. The release feature is removed to expose the first substrate by a wet etching process. A portion of the exposed first substrate is anisotropically etched. A second substrate is disposed above the circuitry layer. A cavity is formed in the lower surface of the first substrate. The cavity is filled with a polymeric material. A portion of the first substrate under the microstructure is removed to release the micro-electromechanical structure.

Method for manufacturing a micro-electromechanical structure

A method for fabricating a sealed cavity microstructure comprises the steps of: forming an insulation layer with a micro-electro-mechanical structure on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one suspended structure and at least one conductive structure between which is disposed a spacer region; after an etching, filling a sacrificial layer into the spacer region and on the surface of the conductive structure; forming holes in the sacrificial layer correspondingly to the conductive structure; depositing a cap layer into the holes and the surface; after removing the sacrificial layer, utilizing the clearance of the cap layer to carry out a further etching to realize the suspension of the micro-electro-mechanical structure; and finally, utilizing a sealing layer to achieve the sealing effect. By such arrangements, the exposure of the micro-electro-mechanical structure can be effectively prevented, and the final package cost can be reduced.

Method for fabricating a sealed cavity microstructure

A suspension microstructure and its fabrication method, in which the method comprises the steps of: forming at least one insulation layer with inner micro-electro-mechanical structures on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one microstructure and a plurality of metal circuits that are independent from each other, the micro-electro-mechanical structures have an exposed portion on the surface of the insulation layer, and the exposed portion is provided with through holes or stacked metal-via layers correspondingly to the predetermined etching spaces of the micro-electro-mechanical structures, the above predetermined etching spaces and the stacked metal-via layers only penetrate the insulation layer; forming a photoresist with an opening on the upper surface of the exposed portion, and the opening of the photoresist is located outside all the through holes or the stacked metal-via layers; subsequently, conducting etching to realize the suspension of the microstructures.

Method of fabricating a suspension microstructure

A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.

Growing community of inventors

Hsinchu, Taiwan

Siew-Seong Tan