Other

Chartered Semiconductor Manufacturing Ltd (Corporation)

National University of Singapore

Siew Lok Toh

Simon Yew-Meng Chooi

Luona Goh

Soo Jin Chua

Cho Jui Tay

Ramam Akkipeddi

Mustafizur Rahman

Tong Earn Tay

Christopher P Sperring

Christopher Philip Sperring

A contact pressure sensor () and method for manufacturing a contact pressure sensor for detecting contact pressure between two surfaces is disclosed. The contact pressure sensor disclosed comprises a substrate () for supporting the sensor and a contact pressure sensitive layer () sensitive to pressure applied to the contact pressure sensor. The method disclosed also comprises transferring a process post structure () that is formed on a first process support substrate () from the first process support substrate to a second contact pressure sensor support substrate (

Contact pressure sensor and method for manufacturing the same

Method of improving adhesion of low dielectric constant films to other dielectric films and barrier metals in a damascene process are achieved. In one method, a low dielectric constant material layer is deposited on a substrate. Silicon ions are implanted into the low dielectric constant material layer. Thereafter, a TEOS-based silicon oxide layer is deposited overlying the low dielectric constant material whereby there is good adhesion between low dielectric constant material layer and the TEOS-based silicon oxide layer. In another method, a low dielectric constant material layer is deposited on a substrate. A silicon-based dielectric layer is deposited overlying the low dielectric constant material wherein the silicon-based dielectric layer is not silicon oxide whereby there is good adhesion between the low dielectric constant material layer and the silicon-based dielectric layer.

Method to improve adhesion of dielectric films in damascene interconnects

Growing community of inventors

Singapore, Singapore

Siew Lok Toh