Sixpoint Materials, Inc.

Seoul Semiconductor Co., Ltd.

Sierra Hoff

Tadao Hashimoto

Edward Letts

The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

Method of growing group III nitride crystals

The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.

Group III nitride wafer and its production method

The present invention discloses a new tool to slice crystal ingots by using laser beams. Ingot crystals of III-nitride such as GaN are immersed in alkali solutions and irradiated with scanned lines of laser beams to slice wafers out of the ingots. The method is expected to achieve approximately one order of magnitude smaller slicing loss with minimized slicing damage.

Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer

The present invention discloses a semi-insulating wafer of GaAlInN (0&#x2266;x&#x2266;1, 0&#x2266;x+y&#x2266;1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 10ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 10cm. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.

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Solvang, CA, United States of America

Sierra Hoff