Osram Gmbh

Osram Opto Semiconductors Gmbh

Siegmar Kugler

Georg Bogner

Norbert Stath

Ernst Nirschl

Raimund Oberschmid

Karl-Heinz Schlereth

Olaf Schoenfeld

Gerald Neumann

Norbert Linder

Klaus Streubel

Günther Grönninger

Peter Heidborn

A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of AlGaAsPwith 0&#x2266;x&#x2266;1 and 0&#x2266;y&#x2266;1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.

Semiconductor substrate of GaAs and semiconductor device

The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance LED chip and a method for producing same

The invention concerns a light-emitting diode chip () comprising a radiation-emitting active region () and a window layer (). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region () is smaller than the cross-sectional area of the window layer () available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

High radiance led chip and a method for producing same

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Wuppertal, Germany

Siegmar Kugler