Infineon Technologies Ag

Intel Mobile Communications Gmbh

Siegmar Koeppe

Winfried Kamp

Stephan Henzler

Joel Hatsch

Peter Huber

Michael Scheppler

Julie Aunis

Thomas Kuenemund

Xiaoning Nie

Georg Georgakos

Martin Ostermayr

Karl Hofmann

Jinan Lin

Thomas Niedermeier

Michel d'Argouges

Ulf Nordqvist

Stefan Maier

A semiconductor device includes an identification circuit. The identification circuit includes a memory cell which includes a first transistor having a first value of a switching characteristic and a second transistor having a second value of the switching characteristic. The identification circuit is operable to generate a memory-cell-specific identification bit which is dependent on production-dictated differences in the first switching characteristic of the first transistor and the second switching characteristic of the second transistor. The identification circuit further includes a drive circuit for the memory cell. The drive circuit is operable to connect or isolate an upper supply potential and a lower supply potential of the semiconductor device to or from the memory cell independently of one another.

Identification circuit and method for generating an identification bit

A method of testing a latch based memory device is disclosed. The latch based memory device includes a number of latches, electrical connections and a circuit environment of the latches. A storage functionality of the latches can be tested during a first test phase while a functionality of the electrical connections and the circuit environment of the latches can be tested during a second test phase.

Latch based memory device

Rather than merely carrying out a BIST test by verifying whether a memory cell accurately stores a '1' or '0' under normal read/write conditions, aspects of the present discloser relate to BIST tests that test the read and/or write margins of a cell. During this BIST testing, the read and/or write margins can be incrementally stressed until a failure point is determined for the cell. In this way, &#x201c;weak&#x201d; memory cells in an array can be identified and appropriate action can be taken, if necessary, to deal with these weak cells.

Memory reliability verification techniques

A latch based memory device includes a plurality of latches and a method of testing the latch based memory device that includes serially connecting the latches with each other so as to form a shift register chain. A bit sequence is input into the shift register chain to shift the bit sequence through the shift register chain. A bit sequence is outputted and shifted through the shift register chain, and the input bit sequence is compared with the output sequence to evaluate the functionality of the latches in a first test phase and to test the remaining structures of the latch based memory device in a second test phase by using, e.g., a conventional scan test approach.

Implementations are presented herein that include a time delay path.

Apparatus and system with a time delay path and method for propagating a timing event

Method and device for controlling a memory access and correspondingly configured semiconductor memory A method and a device for controlling a memory access of a memory comprising memory cells are described. A completion of the memory access is determined by means of at least one dummy bit line. The at least one dummy bit line is connected to a plurality of memory cells of the memory cells of the memory such that a content of the at least one memory cell can be read out via the at least one dummy bit line. The at least one memory cell can be set to a predetermined potential. Each of said plurality of memory cells is connected to the at least one dummy bit line and to at least one dummy word line such that each of said plurality of memory cells can be set to the predetermined potential by means of the at least one dummy bit line and by means of the at least one dummy word line.

Method and device for controlling a memory access and correspondingly configured semiconductor memory

A data moving processor includes a code memory coupled to a code fetch circuit and a decode circuit coupled to the code fetch circuit. An address stack is coupled to the decode circuit and configured to store address data. A general purpose stack is coupled to the decode circuit and configured to store other data. The data moving processor uses data from the general purpose stack to perform calculations. The data moving processor uses address data from the address stack to identify source and destination memory locations. The address data may be used to drive an address line of a memory during a read or write operation. The address stack and general purpose stack are separately controlled using bytecode.

Data moving processor

A divider circuit comprises at least two clock edge controlled differential buffer store elements, each being clocked by complementary input clock signals, each comprising internal storage nodes which are pre-chargeable to a pre-charge potential, and each comprising a differential data input. The internal storage nodes of the buffer store elements are either pre-charged at the pre-charge potential or store a logic level, depending on the relevant input clock signals. The differential data inputs of one of the buffer store elements is connected to the internal storage nodes of the other buffer store element and pulsed signals can be tapped off at the internal differential storage node.

Divider circuit

A circuit arrangement for supplying configuration data in an FPGA device includes a plurality of output flip flops allocated to respective configurable logic cells of the FGPGA device. Each output flip flop comprises at least one data input and one data output and a data input of a first output flip flop of the plurality of output flip flops is switchably connected to a data output of a second output flip flop of the plurality of output flip flops for forming a shift register by means of a switching device integrated in the FPGA device.

Circuit arrangement for supplying configuration data in FPGA devices

A mask-programmable logic macro includes at least three input terminals an output terminal and a first set of transistors comprised of at least three transistors formed on a semiconductor substrate, each of the transistors comprising a controllable path and a control terminal. The controllable paths can be connected in series with one another between a first supply terminal and the output terminal by metallizing first metallization regions. The the transistors of the first set of transistors are arranged on the semiconductor substrate in such a way that at least one controllable path of the transistors can be bridged by metallizing one of the first metallization regions. A respective of the input terminals can be connected to a respective of the control terminals by metallizing a second metallization region.

Mask-programmable logic macro and method for programming a logic macro

The invention relates to a shift register cell for safely providing a configuration bit having a master latch which can be connected to a serial data input on the shift register cell for the purpose of buffer storing a data bit; a first slave latch which can be connected to the master latch for the purpose of buffer storing the data bit; at least one second slave latch which can be connected to the master latch for the purpose of buffer storing the data bit, and having an evaluation logic unit which outputs the configuration bit on the basis of the data bits which are buffer stored in the master latch and in the slave latches. In addition, the invention provides a shift register for safely providing configuration bits which has a plurality of inventive shift register cells which are connected in series to form a shift register chain.

Growing community of inventors

Munich, Germany

Siegmar Koeppe