Forschungszentrum Julich Gmbh

Forschungszentrum Juelich Gmbh

Siegfried Mantl

Qing-Tai Zhao

Bernhard Holländer

Dan Mihai Buca

Ludger Kappius

Quing-Tai Zhao

Sebastian Blaeser

Stephan Wirths

Armin Antons

Ralf Liedtke

Bernhard Holl&auml;nder

Helge Bay

Detlev Grützmacher

Rainer Butz

Patrick Kluth

Bernd Hollander

A method for monolithically depositing a monocrystalline IV-IV layer that glows when excited and that is composed of a plurality of elements of the IV main group, in particular a GeSn or Si&#x2014;GeSn layer, the IV-IV layer having a dislocation density less than 6 cm, on an IV substrate, in particular a silicon or germanium substrate, including the following steps: providing a hydride of a first IV element (A), such as GeHor SiH; providing a halide of a second IV element (B), such as SnCl; heating the substrate to a substrate temperature that is less than the decomposition temperature of the pure hydride or of a radical formed therefrom and is sufficiently high that atoms of the first element (A) and of the second element (B) are integrated into the surface in crystalline order, wherein the substrate temperature lies, in particular, in a range between 300&#xb0; C. and 475&#xb0; C.; producing a carrier gas flow of an inert carrier gas, in particular N, Ar, He, which in particular is not H; transporting the hydride and the halide and decomposition products arising therefrom to the surface at a total pressure of at most 300 mbar; depositing the IV-IV layer, or a layer sequence consisting of IV-IV layers of the same type, having a thickness of at least 200 nm, wherein the deposited layer is, in particular, a SiGeSn layer, with x&#x3e;0.08 and y&#x2264;1.

Method for depositing a crystal layer at low temperatures, in particular a photoluminescent IV-IV layer on an IV substrate, and an optoelectronic component having such a layer

A method for producing a tunnel field-effect transistor (TFET) having a source region, a channel region, and a drain region includes arranging an epitaxial layer on a silicon substrate; applying a gate arrangement having a gate electrode to the epitaxial layer, a gate dielectric being arranged between the gate electrode and the silicon substrate; forming a doped pocket region below the gate dielectric adjacent to the source region; forming a selectively silicidated region in the source region, the selectively silicidated region extending as far as to below a gate; and forming a counter-doped region doped in an opposite way to the pocket region adjacent to the pocket region in the source region by diffusion of dopants out of the silicidated region, as a result of which a tunnel junction parallel to the electric field lines of the gate electrode is achieved.

Tunnel field-effect transistor and method for producing same

The invention relates to a method for producing a strained layer. Said method comprises the following steps: placing the layer on a substrate and straining it, structuring the strained layer, relaxing the layer, producing directional off-sets in the layer to be strained. A layered structure produced in this manner has triaxially strained layers.

Method for producing a strained layer on a substrate and layered structure

A silicon on insulator (SOI) substrate is converted into a strained SOI substrate by first providing an SOI substrate having a thin silicon layer and an insulator and at least one first epitaxial relaxing layer on the SOI-substrate. Then a defect region is produced in a layer by implantation of SI ions above the silicon layer of the SOI-substrate. Finally the first layer is relaxed by a thermal treatment in an inert atmosphere to simultaneously strain the silicon layer of the SOI-substrate via dislocation mediated strain transfer and to produce the strained silicon layer directly on the insulator.

Method of producing a tensioned layer on a substrate

The invention relates to a method for producing a tensioned layer on a substrate involving the following steps: producing a defect area in a layer adjacent to the layer to be tensioned, and; relaxing at least one layer adjacent to the layer to be tensioned. Additional layers can be epitaxially deposited. Layer structures formed in this manner are advantageously suited for components of all types.

Method for producing a tensioned layer on a substrate, and a layer structure

The invention relates to a method for the production of passivated defining surfaces () between a first layer, such as a silicide (), and an adjacent layer. Passivating elements, such as S, Se and Te are used in said layer structure during said method and the first layer is enriched on the adjacent layer during heat treatment on at least one defining surface. Schottky barriers can be reduced and output work of the transition can be adjusted. Components, e.g. Schottky barrier MOSFETs with small or negative Schottky barriers arc disclosed as source and/or drain contacts and spin transistors.

Method for producing a contact and electronic component comprising said type of contact

A stress relaxed monocrystalline layer structure is made on a nonlattice matched substrate by first applying to the substrate epitaxially a monocrystalline layer structure comprising at least one layer, the monocrystalline layer structure forming with the substrate an interface that has a greater lattice parameter mismatch on the substrate than within the monocrystalline layer structure. The monocrystalline layer is irradiated by directing an ion beam to generate predominantly point effects in the monocrystalline layer structure and an extended defect region in the substrate proximal to the monocrystalline layer structure. Then the monocrystalline layer structure is thermally treated in a temperature range of 550&#xb0; C. to 1000&#xb0; C. in an inert, reducing or oxidizing atmosphere so that the monocrystalline layer structure above the extended defect region is stress relaxed and has a defect density less than 10cmand a surface roughness of less than 1 nm.

Producing stress-relaxed crystalline layer on a substrate

The invention relates to a method for producing a layer structure comprising a strained layer on a substrate. The inventive method comprises the steps of producing a defect area in a layer adjoining the layer to be strained, and relaxing at least one layer adjoining the layer to be strained. The defect area is especially produced in the substrate. Additional layers can be epitactically grown. Layer structures so produced are especially suitable for producing various types of components.

Method for producing a strained layer on a substrate and corresponding layer structure

The invention relates to a method for the production of structures in the nanometer range from larger, existing structures. An elastic strain field in generated in an already structured layer and optionally in a substrate. A strain-dependent diffusion and reaction process subsequently takes place, wherein the existing structure can be reduced in a reproducible manner by means of material transport.

Method for producing a layer on a substrate

The invention relates to a method for producing a layer with a sub-micrometre structure on a substrate. First, a layer is formed on the substrate. Agents for creating elastic strains are then formed in at least one predetermined position on the layer and the layer is then subjected to a strain-dependent solid-state reaction. This results in material separating and consequently, in the layer being structured in this position.

Method for producing nanostructures in thin films

The invention relates to a method for the production of a monocrystalline layer on a substrate with a non-adapted lattice. To this end, a monocrystalline substrate with a buried amply defective layer and a monocrystalline layer produce thereon are used. The buried amply defective layer can be produced by hydrogen implantation.

Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers

Layered structure with a silicide layer and process for producing such a

A buried amorphous layer on a crystalline substrate with a monocrystalline surface layer, which is transformed into a mixed-crystal or chemical compound, avoids the formation of lattice defects at the interface even where the lattice parameters of the substrate and the monocrystalline layer are not matched.

Method of producing electronic, electrooptical and optical components

An epitaxial growth of a first component of a multilayer stack for use in optical, electro-optical and electronic or magnetic components, e.g. on a silicon wafer, can be formed by depositing a second component in a form in which that second component produces a precipitate or inclusions in the first component which with continued deposition may be partly replaced by a third component so that the precipitate itself is buried in a monocrystalline structure and, after a thermal treatment in which the precipitate coalesces, a buried layer is formed of the second component or a compound thereof with, say, the first component, in that monocrystalline structure.

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Jülich, Germany

Siegfried Mantl