Oerlikon Surface Solutions Ag, Pfaffikon

Oc Oerlikon Balzers Ag

Oerlikon Trading Ag, Truebbach

Unaxis Trading Ag

Unaxis Balzers Limited

Oerlikon Surface Solutions Ag, Trubbach

Unaxis-balzers Aktiengesellschaft

Oerlikon Trading Ag, Trubbach

Plansee Composite Materials Gmbh

Balzers Hochvakuum Ag

Unakis Trading Ag

Oerlikon Surface Solultions Ag, Trubbach

Evatec Ag

Oerlikon Solar Ag, Trubbach

Siegfried Krassnitzer

Denis Kurapov

Juerg Hagmann

Walter Haag

Pius Grunenfelder

Markus Lechthaler

Daniel Lendi

Urs Schwendener

Oliver Gstoehl

Markus Schlegel

Stanislav Kadlec

Martin Dubs

Jürgen Weichart

Siva Phani Kumar Yalamanchili

Thomas Eisenhammer

Joerg Kerschbaumer

Kurt Ruhm

Dominik Wimo Amman

Bernd Heinz

Andreas Peter Treuholz

Marijana Mionic Ebersold

Jürg Hagmann

Helmut Rudigier

Peter Polcik

Juergen Ramm

Jörg Vetter

Mirjam Arndt

Hamid Bolvardi

Pius Gruenenfelder

Markus Esselbach

Stephan Kasemann

Sabine Woerle

Sebastien Guimond

Fachri Atamny

Jürgen Gwehenberger

Arno Moosbrugger

Mario Wolfgang Walch

Fredy Zünd

Marco Mayer

Oliver Cstoehl

Daniel Lewis

Dominik Erwin Widmer

Juergen Gwehenberger

Sabine WÖRLE

Mario Walch

A cathodic arc evaporation apparatus including

Cathodic arc source

A method for producing coated substrates involving deposition of at least one coating layer on a surface of the substrate. The coating layer is synthesized in the interior of a vacuum coating chamber by using reactive PVD cathodic evaporation techniques. Nitrogen gas is introduced in the vacuum coating chamber to be used as reactive gas, and at least one arc evaporation source comprising a target material operated as cathode for evaporating the target material is used. The method involves a reactive deposition of aluminium titanium nitride as a result of a reaction between aluminium and titan from the target material with nitrogen from the nitrogen gas comprised in the coating chamber.

Method for forming Al-rich AlTiN coating layers by PVD from metallic targets

A coating layer and a method for producing thereof, wherein the coating layer includes Al, Cr and N as main components according to formula (AlCr)OCN, where a and b are respectively the concentration of aluminium and chromium in atomic ratio considering only Al and Cr for the calculation of the element composition in the layer, whereby a+b=1 and 0≠a≥0.7 and 0≠b≥0.2, and where x is the sum of the concentration of Al and the concentration of Cr, and y, z and q are the concentration of oxygen, carbon and nitrogen respectively in atomic ratio considering only Al, Cr, O, C and N for the calculation of the element composition in the layer, whereby x+y+z+q=1 and 0.45≤x≤0.55, 0≤y≤0.25, 0≤z≤0.25, and wherein the coating layer exhibits 90% or more of fcc cubic phase, and compressive stress of 2.5 GPa or more, preferably between 2.5 GPa and 6 GPa.

Al-rich AlCrN coating layers produced by PVD from metallic targets

A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas, preferably argon, and at least nitrogen gas as the reactive gas, wherein:

TiCN having reduced growth defects by means of HiPIMS

The present invention relates to a coating device comprising a vacuum coating chamber for conducting vacuum coating processes, said vacuum coating chamber comprising: &#x2014;one or more cooled chamber wallshaving an inner sideb and a cooled sidea, &#x2014;protection shields being arranged in the interior of the chamber as one or more removable shielding plates, which cover at least part of the surface of the inner sideb of the one or more cooled chamber walls, wherein at least one removable shielding plateis placed forming a gapin relation to the surface of the inner sideb of the cooled chamber wallthat is covered by said removable shielding plate, wherein: &#x2014;thermal conductive meansare arranged filling the gapin an extension corresponding to at least a portion of the total surface of the inner sideb of the cooled chamber wallthat is covered by said removable shielding plate, wherein the thermal conductive meansenable conductive heat transfer between said removable shielding plateand the respectively covered cooled chamber wall

Coating device for conducting high efficient low temperature coating

An arc ignition device for cathodic arc deposition of a target material onto a substrate, comprising a trigger finger arranged moveable between a contacting position and a resting position, wherein in the contacting position a side surface of an adjacent target can be physically contacted by the trigger finger, and in the resting position the adjacent target cannot be contacted by the trigger finger, wherein during cathodic arc deposition of a target material, the trigger finger is arranged movable between the contacting position and the resting position in such a way that the contamination of the trigger finger with deposited target material during the cathodic arc deposition of the target material can be minimized.

Cathodic arc ignition device

An ARC evaporator comprising: a cathode assembly comprising a cooling plate (), a target () as cathode element, an electrode arranged for enabling that an arc between the electrode and the front surface (A) of the target () can be established&#x2014;a magnetic guidance system placed in front of the back surface (B) of the target (i) comprising means for generating one or more magnetic whereas: &#x2014;the borders of the cathode assembly comprise a surrounding shield () made of ferromagnetic material, wherein the surrounding shield () has a total height (H) in the transversal direction, said total height (H) including a component (C) for causing a shielding effect of magnetic field lines extending in any longitudinal directions, establishing in this manner the borders of the cathode assembly as limit of the extension of the magnetic field lines in any longitudinal direction.

Arc source with confined magnetic field

A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas; preferably argon, and at least nitrogen gas as the reactive gas, wherein:

A method for coating substrates in an arc vaporization source for generating hard surface coatings on tools is provided. The method includes providing an arc-vaporization source with at least one electric solenoid and a permanent magnet arrangement including marginal permanent magnets and a central permanent magnet. The method further includes adjusting the position of the central and marginal permanent magnets relative to the target surface in at least three settings, adjusting the strength of the generated magnetic field based on the position of the central and marginal permanent magnets among the at least three settings, and coating the substrates by an ARC vaporization coating process performed by the ARC vaporization source at each of the at least three settings.

Modifiable magnet configuration for arc vaporization sources

An ARC evaporator comprising: &#x2014;a cathode assembly, &#x2014;an electrode arranged for enabling that an arc between an electrode and a front surface of the target can be established, and&#x2014;a magnetic guidance system placed in front of a back surface of the target characterized in that: the magnetic guidance system comprises means placed in a central region for generating at least one magnetic field and means in a peripherical region for generating at least one further magnetic field, wherein the magnetic fields generated in this manner result in a total magnetic field for guiding the arc and controlling the cathode spot path at the front surface of the target, wherein the means placed in the central region comprises one electromagnetic coil for generating a magnetic field and the means placed in the peripherical region comprises two electromagnetic coils for generating two further magnetic fields.

ARC source

The present invention relates to a component comprising a substrate coated with a coating having a film (or) comprising one or more transition metals, TM, aluminium, Al, and nitrogen, N, wherein the TM and N as well as Al and N are comprised in the film forming respectively nitride compounds, wherein the transition metal nitride, TM-N, is present in the film distributed in different portions exhibiting one crystalline phase of TM-N, and the aluminium nitride, Al&#x2014;N, is present in the film in different portions exhibiting one phase of Al&#x2014;N, whereas the phase of the transition metal nitride is cubic, c-TMN, the phase of the aluminium nitride is wurtzite, w-AIN, and wherein the film exhibits coherent or (semi-) coherent interfaces between the c-TMN phase portions and the w-AI-N phase portions.

High temperature stable compositionally modulated hard coatings

The present invention relates to an arc vaporization source for generating hard surface coatings on tools. The invention comprises an arc-vaporization source, comprising at least one electric solenoid and a permanent magnet arrangement that is displaceable relative to the target surface. The vaporization source can be adjusted to the different requirements of oxide, nitride, or metal coatings. The rate drop during the lifespan of a target to be vaporized can be held constant or adjusted by suitably adjusting the distance of the permanent magnets to the front side of the target. A compromise between the coating roughness and rate can be set.

The present invention discloses a target assembly which allows safe, fracture-free and economic operation of target materials with low fracture toughness and/or bending strength during arc evaporation processes as well as in sputtering processes. The present invention discloses a target assembly for PVD processes, comprising a target, and a target holding device (), characterized in that the target () comprises a first bayonet lock and the target holding device () comprises a counterbody for the first bayonet lock of the target and a second bayonet lock for engaging the target assembly in the cooling means of the deposition chamber.

Target assembly for safe and economic evaporation of brittle materials

A method for coating substrates with a decorative layer of hard material which is guided into a vacuum coating chamber. The decorative layer of hard material is deposited by a reactive HIPIMS-process, and the energy content in the power pulses is controlled in such a manner that the deposited layer of hard material has a homogeneous colour, a high degree of smoothness and a high strength.

Decorative HIPIMS hard material layers

The invention relates to a HiPIMS method by means of which homogeneous layers can be deposited over the height of a coating chamber. Two partial cathodes are used for said purpose. According to the invention, the length of the individual power pulse intervals applied to the partial cathodes is chosen individually and thus a required coating thickness profile over the height of the coating chamber is achieved.

Homogeneous HiPIMS coating method

Growing community of inventors

Feldkirch, Austria

Siegfried Krassnitzer