Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Gmbh

Osram Opto Semiconductros Gmbh

Siegfried Herrmann

Berthold Hahn

Frank Singer

Stefan Illek

Norwin Von Malm

Martin Rudolf Behringer

Michael Völkl

Thomas Schwarz

Alexander F Pfeuffer

Korbinian Perzlmaier

Erwin Lang

Tansen Varghese

Tobias Meyer

Marc Philippens

Andreas Biebersdorf

Petrus Sundgren

Sebastian Wittmann

Stefan Gruber

Peter Stauss

Bruno Jentzsch

Christine Rafael

Andreas Leber

Christian Mueller

Julia Stolz

Ruth Boss

Herbert Brunner

Jörg Erich Sorg

Alexander Linkov

Dominik Scholz

Markus Maute

Adrian Stefan Avramescu

Alexander Wilm

Sebastian Taeger

Jens Mueller

Alexander Behres

Andreas Plößl

Dieter Eissler

Kerstin Neveling

Ewald Karl Michael Günther

Stefan Grötsch

Karl Engl

Jürgen Moosburger

Lutz Höppel

Christian Leirer

Walter Wegleiter

Johannes Baur

Patrick Rode

Andreas Ploessl

Markus Pindl

Stefan Groetsch

Lutz Hoeppel

Ion Stoll

David J O'Brien

Ulrich Streppel

Luca Haiberger

Ewald Karl Michael Guenther

Matthias Sperl

Ulrich Zehnder

Joerg Sorg

David Racz

Simeon Katz

Laura Kreiner

Lorenzo Zini

Andreas Plöβl

Georg Dirscherl

Helmut Fischer

Albrecht Kieslich

Juergen Moosburger

Georg Roßbach

Wolfgang Moench

Klaus Müller

Günter Spath

Matthias Bruckschloegl

Nicole Heitzer

Ewald K M Günther

Marie Assmann

Eva-Maria Rummel

Manfred Scheubeck

Stefan GRÖTSCH

Ewald Karl Michael GÜNTHER

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.

Electromagnetic radiation emitting device and method of applying a converter layer to an electromagnetic radiation emitting device

The invention relates to a light-emitting component comprising a light-emitting semiconductor chip, a transparent conductive layer, and at least two electrical connection points, wherein the transparent conductive layer covers the light-emitting semiconductor chip at least in places, and the electrical connection points are arranged on a side of the light-emitting semiconductor chip facing away from the transparent conductive layer.

Light-emitting component and display device comprising the same

An optoelectronic device includes an optoelectronic semiconductor chip having a first and a second semiconductor layer having a first and second conductivity type, respectively; a first and a second current spreading layer; a dielectric reflective layer; and a plurality of first electrical connecting elements. The first semiconductor layer and the second semiconductor layer are stacked. The first current spreading layer and the second current spreading layer are arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The dielectric reflective layer is arranged between the first semiconductor layer and the first current spreading layer. The plurality of first electrical connecting elements extends through the dielectric reflective layer and is suitable to electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer is electrically connected to the second semiconductor layer.

Optoelectronic component having a dielectric reflective layer and production method for same

The invention relates to a method for producing a semiconductor component comprising a radiation-emitting optical semiconductor chip or a plurality of radiation-emitting optical semiconductor chips, said method comprising: applying the radiation-emitting optical semiconductor chip or the plurality of radiation-emitting optical semiconductor chips to a deformable flat support deforming the support; and permanently fixing the deformation.

Optical chips mounted on a deformed carrier

An optoelectronic semiconductor device may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and an insulating intermediate layer. The second semiconductor layer may be arranged over a substrate. The first semiconductor layer may be arranged between the second semiconductor layer and the substrate. The first current spreading structure may be electrically connected to the first semiconductor layer, and the second current spreading structure electrically may be connected to the second semiconductor layer. The insulating intermediate layer may include a dielectric mirror and may be arranged between the second current spreading structure and the second semiconductor layer. The current spreading structures may overlap one another in a plane perpendicular to a main surface of the substrate. The first current spreading structure may be arranged at a larger distance from the first semiconductor layer than the second current spreading structure.

Optoelectronic semiconductor device comprising a first and a second current spreading structure

A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.

Light-emitting semiconductor component and method for producing a light-emitting semiconductor component

An optoelectronic semiconductor component and a method for producing optoelectronic semiconductor components are disclosed. In an embodiment a optoelectronic semiconductor component includes a plurality of semiconductor pillars, each pillar having a tip and a base region at opposite ends, an electrical isolation layer surrounding at least part of the semiconductor pillars on side faces and at least one first electrical contact pad and at least one second electrical contact pad for energizing the semiconductor pillars, wherein a first portion of the semiconductor pillars are emitter pillars configured to generate radiation, wherein a second portion of the semiconductor pillars are non-radiating electrical contact pillars, wherein the contact pillars extend through the isolation layer such that all contact pads are located on the same side of the isolation layer, and wherein each contact pillars is coated with an electrically ohmically conductive outer layer.

Optoelectronic semiconductor component and method for producing optoelectronic semiconductor components

An optoelectronic assembly comprises at least two electrical contacts on a surface of an optoelectronic component for supplying electrical energy for generating electromagnetic radiation, and at least two meander-shaped contact lugs, each of which comprises a first and a second section. The first section in each case of the at least two meander-shaped contact lugs is coupled to one of the at least two electrical contacts. The second section in each case of the at least two meander-shaped contact lugs comprises a fastening element which is designed to go into a mechanical linkage to a fiber structure of a carrier and to create an electrical connection to the first section.

Optoelectronic assembly, method and molded part

A semiconductor display may include a multiplicity of semiconductor pillars as well as first contact strips and second electrical contact strips. The semiconductor pillars each comprise a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type, as well as an active layer between them for radiation generation. The semiconductor pillars each comprise an energization shell which is applied onto the respective semiconductor shell for energization. The semiconductor pillars can be electrically driven independently of one another individually or in small groups by means of the first and second electrical contact strips.

Semiconductor display, optoelectronic semiconductor component and method for the production thereof

The invention relates to an embodiment in which the textile component comprises at least one flexible thread that can be woven. A plurality of semiconductor columns are attached in or on the thread and are configured to generate radiation. Furthermore, a plurality of electrical lines are located in or on the thread, by means of which lines the semiconductor columns are electrically contacted. An average height (H) of the semiconductor columns in a direction transverse to a longitudinal direction (L) of the thread is at most 20% of an average diameter (D) of the thread.

Textile component and method for producing a textile component

A method of producing an optoelectronic component includes providing an opto-electronic semiconductor chip including a layer sequence arranged on a substrate, wherein the layer sequence includes a contact side including two electrical contact locations, the contact side facing away from the substrate; arranging the optoelectronic semiconductor chip on an auxiliary carrier such that the contact side faces away from the auxiliary carrier; arranging a molding material above the auxiliary carrier such that a housing is formed that at least partly encloses the optoelectronic semiconductor chip, wherein the contact side is covered by the molding material; and detaching the housing from the auxiliary carrier.

Method of producing an optoelectronic component, and optoelectronic component

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Neukirchen, Germany

Siegfried Herrmann