Intel Corporation

International Business Machines Corporation

Siddhartha Das

Harry H Fujimoto

Chunlin Liang

Luisa Dominica Bozano

Andrea Fasoli

Henry Gaw

Provided is a system for detection and discrimination of gases, such as volatile organic compounds (VOCs), in a sample comprising two chambers, a first chamber equipped with a crystalline microporous material (CMM) and a second chamber equipped with a gas detector. A gas sample is introduced first into the second chamber for detection by the gas detector and is then re-routed to the first chamber for adsorption/desorption on the CMM. The gas detector in the second chamber produces electronic signals that correspond to the adsorption/desorption profile for the gas, which allows for discrimination of the gas in the sample from other possible gas samples.

Adsorption/desorption-based sensor for volatile organic compounds (VOCs)

A process for patterning a gate of a semiconductor device is provided. A gate material layer is formed upon an oxide layer of a substrate. A photoresist layer is formed upon the gate material layer. A portion of the photoresist layer is photo oxidized. The portion defines a gate pattern. The portion of the photoresist layer is converted into a hard mask. A portion of the gate material layer is patterned with the hard mask. The portion of the gate material layer defines a gate.

Method employing silicon nitride spacers for making an integrated circuit device

A process for patterning a gate of a semiconductor device is provided. A gate material layer is formed upon an oxide layer of a substrate. A photoresist layer is formed upon the gate material layer. A portion of the photoresist layer is photo-oxidized. The portion defines a gate pattern. The portion of the photoresist layer is converted into a hard mask. A portion of the gate material layer is patterned with the hard mask. The portion of the gate material layer defines a gate.

Method for patterning polysilicon gate layer based on a photodefinable

Process for post exposure treatment of a latent image on a semiconductor wafer. After a deep ultraviolet (UV) photoresist has been exposed, the wafer, including the latent image in the attached photoresist, is maintained in an inert gas to protect the resist from the air atmosphere. Then the latent image is baked to stabilize the image.

Deep ultraviolet light photoresist processing

Manufacturing techniques for forming waveguide channels and devices. A trench is formed in a cladding layer through an opening in a conductive layer. The trench is then filled with an active waveguide polymer and the conductive layer is patterned such that the active waveguide polymer may be poled. Also, a trench may be isotropically etched through a cladding layer to an underlying etch stop layer. The etch stop layer is thereafter removed from within the trench region to expose a previously formed, smooth, underlying cladding layer. Finally, a waveguide formed in a cladding layer, bounded in width by an overlying barrier layer, underlies a masking layer having a gap formed therein. Within the gap, a portion of the waveguide channel along with juxtaposing sections of the barrier layer are exposed. An etch is thereafter performed to remove the portion of the waveguide polymer in the waveguide channel bounded by both the masking layer and the barrier layer. Then an alternate type of waveguide polymer is formed in the void left behind by the etched waveguide polymer in the waveguide channel. Thus, a single waveguide channel having a plurality of waveguide polymers is formed.

Growing community of inventors

Sunnyvale, CA, United States of America

Siddhartha Das