Infineon Technologies Ag

Arm Limited

Siddharth Gupta

Gunther Lehmann

Yannick Martelloni

Antony John Penton

Devesh Dwivedi

Cyrille Nicolas Dray

Jean-Yves Larguier

Sachin Gulyani

Luc Olivier Palau

An apparatus comprises a storage configured to store data items associated with error correction codes (ECCs); data retrieval circuitry responsive to a data retrieval request specifying a retrieval address to retrieve a retrieved data item and an associated ECC from a storage location corresponding to the retrieval address; and ECC decoding circuitry to generate a syndrome value by performing an ECC decoding operation on a decoding input value comprising data bits of the retrieved data item, code bits of the associated ECC, and address bits of the retrieval address, and to determine based on the syndrome value whether an error condition has occurred. Each bit of the syndrome value depends on a different combination of bits of the decoding input value. For each data bit of the decoding input value, an odd number of bits of the syndrome value depend on that data bit. For each address bit of the decoding input value, an even number of bits of the syndrome value depend on that address bit.

Error correction code

An apparatus is provided having a memory device and associated access control circuitry, and an additional memory device and associated additional access control circuitry. Redundant data generation circuitry generates, for a given block of data having an associated given memory address, an associated block of redundant data for use in an error detection process. The access control circuitry is arranged to store, at a location in the memory device determined from the given memory address, at least a portion of the given block of data and a first copy of the associated block of redundant data, and the additional access control circuitry is arranged to store, at a location in the additional memory device determined from the given memory address, any remaining portion of the given block of data not stored in the memory device and a second copy of the associated block of redundant data. Error detection circuitry performs the error detection process on the stored given block of data using one copy of the associated block of redundant data, and generates an output signal indicating a result of the error detection process. Comparison circuitry compares the first and second copies of the associated block of redundant data, and generates a comparison result signal to supplement the output signal from the error detection circuitry.

Apparatus and method for detecting errors in a memory device

According to one embodiment, a memory device is described including a memory array including a plurality of memory cells wherein each memory cell is coupled to a control line, a memory assist circuit configured to, when activated, apply a reduction of a voltage of the control line, a signal generator configured to generate a signal representing at least one of a process corner of the memory device, a supply voltage of the memory device, a temperature of the memory device and an aging of the memory device, a signal processing circuit configured to amplify the signal and a controller configured to activate the memory assist circuit based the amplified signal.

Memory device and methods for controlling a memory assist function

Methods and devices are disclosed where a voltage on a wordline is changed from a first voltage to a second voltage via a plurality of intermediate voltages.

Wordline activation

A memory arrangement, particularly a ROM, having memory cells, local virtual supply voltage lines, word lines and result lines may also include global virtual supply voltage lines that run along the width of the memory arrangement parallel to the word lines. The local virtual supply voltage lines run parallel to the result lines, and perpendicularly to the word lines where the each local virtual supply voltage line runs only within a block of the memory arrangement. Each global virtual supply voltage line, in each block through which it runs, is connected to one local virtual supply voltage line. The coupling capacitance between the supply voltage lines and the result lines, and the inherent capacitance of the supply voltage lines are reduced, reducing the power consumption and increasing the clock frequency of the memory arrangement.

Memory arrangement with low power consumption

A memory device has a first core memory array, a second core memory array, a third core memory array and a fourth core memory array, and a first common reference section for the first core memory array and the second core memory array, and a second common reference section for the third core memory array and the fourth core memory array. Another memory device with shared signals and a method is also provided.

Memory device with shared reference and method

A method supplies voltage to a bit line of a memory device. The method includes precharging, with a precharging device, the bit line to an output potential, deactivating the precharging device during a read action related to the bit line, reading, during the read action, an information via the bit line, and routing, during the read action, a virtual voltage supply line to a supply potential of the memory device to supply voltage to memory cells of the memory device assigned to the bit line. The precharging device of the bit line is activated/deactivated as a function of the potential of the virtual voltage supply line.

Supplying voltage to a bit line of a memory device

It is proposed that bitline inversion coding data be integrally stored in the structure of a column multiplexer of a storage device. For this purpose, connections to a predefined potential are selectively provided at connection points, which are respectively assigned to one of the bitlines connected to the column multiplexer, in dependence on whether or not the assignment of a first state and of a second state of memory cells, connected to the bitline, to a binary value '0' and to a binary value '1' is inverted for the respective bitline. The connection points are connected to a common nodal point via switching means. The switching means are activated through control signals of the column multiplexer. Selection signals for activating inverter means, in order to effect a selective inversion of values read out from the memory cells, are generated in dependence on the signal level at the common nodal point. A precharging of the common nodal point is preferably effected between to read-out operations in each case, for which purpose precharging switching means are provided.

Growing community of inventors

Bengaluru, India

Siddharth Gupta