Applied Materials, Inc.

Sidda Reddy Kurakula

Boon Sen Chan

Abyaya Dhar

Yash Chhabra

Chandrasekhar Roy

Chih Chuan Wang

Yi Nung Wu

Tzu-Yen Hsieh

Yenwei Hung

Joseph Liu

The present disclosure includes edge defect detection via image analytics. A method includes identifying an image of an edge of a susceptor pocket formed by a susceptor of a substrate processing system. The method further includes predicting, based on the image, whether property values of the edge of the susceptor meet threshold values. The method further includes, responsive to the property values of the edge meeting threshold values, causing performance of a corrective action associated with the susceptor.

Edge defect detection via image analytics

A method includes identifying an image of a substrate processing equipment part that forms a plurality of holes. The method further includes determining, by a processing device based on the image, a corresponding neighboring angular distance of each of the plurality of holes and a corresponding area of each of the plurality of holes. The method further includes identifying, by the processing device, a first subset of the plurality of holes that are at least partially clogged based on at least one of the corresponding neighboring angular distance or the corresponding area of each of the plurality of holes. A corrective action associated with the substrate processing equipment part is to be performed based on the first subset of the plurality of holes that are at least partially clogged.

Clog detection via image analytics

Methods for in-situ and real-time chamber condition monitoring is provided. For example, in one embodiment, for each wafer in a chamber, a frequency and wavelength of the free radicals in the chamber is monitored in-situ. The frequency and wavelength of the free radicals are associated with at least one selected chemical. The associated free radicals are compared to an index. The index includes a target range for each chemical in the at least one selected chemical.

In-situ real-time plasma chamber condition monitoring

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Bengaluru, India

Sidda Reddy Kurakula