Chinese Academy of Sciences

Sicong Tian

Cunzhu Tong

Lijie Wang

Shili Shu

Lijun Wang

Xin Zhang

Yufei Zhao

Fangyuan Sun

Dieter Bimberg

Gunter Larisch

Jiaxin Xu

Guanyu Hou

A method of fabricating at least one radiation emitter including fabricating a layer stack that includes a first reflector, an active region, an oxidizable layer, and a second reflector; and locally removing the layer stack, and thereby forming at least one mesa. The mesa includes the first reflector, the active region, the oxidizable layer and the second reflector. Before or after locally removing the layer stack and forming the mesa the following steps are carried out: vertically etching at least three blind holes inside the layer stack, wherein the blind holes vertically extend to and expose the oxidizable layer; and oxidizing the oxidizable layer via the sidewalls of the blind holes in lateral direction. An oxidation front radially moves outwards from each hole. The etching is terminated before the entire oxidizable layer is oxidized, thereby forming at least one unoxidized aperture that is limited by at least three oxidation fronts.

Radiation emitter

A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

Semiconductor laser and fabrication method thereof

A laser beam combining system, including at least one beam combining unit. The beam combining unit includes reflective device, polarization conversion element and beam combining device. The reflective device includes two reflective surfaces configured to divide a high-polarization laser into a first beam and a second beam. The first beam is incident on the beam combining device. The polarization conversion element is provided on a propagation path of the second beam to convert the second beam into a light having a polarization direction perpendicular to an original polarization direction of the second beam. The converted light is guided to the beam combining device which is configured to combine the first beam and the converted light into one beam for outputting.

Laser beam combining system

The present invention provides a spectral beam combined laser system comprising an optical gain element array, a transform element, a diffraction element and a reflecting element, which are sequentially positioned in an optical path, wherein said optical gain element array comprises a plurality of gain elements radiate laser beams having different wavelength; said transform element focuses and spatially overlaps the laser beams received from said optical gain element array at said diffraction element; said diffraction element diffracts the laser beams spatially overlapped by the transform element to the reflecting element; and said reflecting element feeds back a portion of the laser beams to the optical gain element array in a V-shaped off-axis external cavity with off-axis angle, wherein said V-shaped off-axis external cavity is formed between the reflecting element and the optical gain element array.

Spectral beam combined laser system and method

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Jilin, China

Sicong Tian