California Institute of Technology

The United States of America As Represented by the Administrator of the

Polaroid Corporation

Siamak Forouhar

Morteza Gharib

Robert J Lang

Ryan Morrow Briggs

Dominique Claire Fourguette

Darius Modarress

Frederic Taugwalder

Clifford F Frez

Daniel W Wilson

Aland K Chin

Richard E Muller

Alexander Ksendzov

John W Ford, Jr

Mahmood Bagheri

Carl E Borgentun

Anders G Larsson

Quantum cascade (QC) lasers and methods of fabricating such QC lasers are provided. The QC lasers incorporate a DFB grating without requiring the use of relying on epitaxial regrowth processes. The DFB gratings are formed as sidewall gratings along the lateral length of the QC active region, or the DFB gratings are formed atop the lateral length of the QC active region, and wherein the top DFB grating is planarized with a polymeric material.

Index-coupled distributed-feedback semiconductor quantum cascade lasers fabricated without epitaxial regrowth

Single-mode, distributed feedback interband cascade lasers (ICLs) using distributed-feedback gratings (e.g., lateral Bragg gratings) and methods of fabricating such ICLs are provided. The ICLs incorporate distributed-feedback gratings that are formed above the laser active region and adjacent the ridge waveguide (RWG) of the ICL. The ICLs may incorporate a double-ridge system comprising an optical confinement structure (e.g., a RWG) disposed above the laser active region that comprises the first ridge of the double ridge system, a DFB grating (e.g., lateral Bragg grating) disposed above the laser active region and adjacent the optical confinement structure, and an electric confinement structure that passes at least partially through the laser active region and that defines the boundary of the second ridge comprises and the termination of the DFB grating.

Single-mode, distributed feedback interband cascade lasers

Integrated sensors are described using lasers on substrates. In one embodiment, a first sensor forms a laser beam and uses a quartz substrate to sense particle motion by interference of the particles with a diffraction beam caused by a laser beam. A second sensor uses gradings to produce an interference. In another embodiment, an integrated sensor includes a laser element, producing a diverging beam, and a single substrate which includes a first diffractive optical element placed to receive the diverging beam and produce a fringe based thereon, a scattering element which scatters said fringe beam based on particles being detected, and a second diffractive element receiving scattered light.

Integrated particles sensor formed on single substrate using fringes formed by diffractive elements

A diffractive optic sheer stress sensor operates by forming diverging fringes over a linear area of measurement. A diode laser focuses light onto a diffractive lens which focuses the light to respective slits. The slits form diverging fringes, and scattered light from the fringes is collected by a window and focused by another diffractive lens to a receiver.

Diffractive optical fluid shear stress sensor

A semiconductor optical integrated circuit for wave division multiplexing has a semiconductor waveguide layer, a succession of diffraction grating points in the waveguide layer along a predetermined diffraction grating contour, a semiconductor diode array in the waveguide layer having plural optical ports facing the succession of diffraction grating points along a first direction, respective semiconductor diodes in the array corresponding to respective ones of a predetermined succession of wavelengths, an optical fiber having one end thereof terminated at the waveguide layer, the one end of the optical fiber facing the succession of diffraction grating points along a second direction, wherein the diffraction grating points are spatially distributed along the predetermined contour in such a manner that the succession of diffraction grating points diffracts light of respective ones of the succession of wavelengths between the one end of the optical fiber and corresponding ones of the optical ports.

Wavelength-division multiplexed optical integrated circuit with vertical

Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate

Strained layer InP/InGaAs quantum well laser

There is disclosed a method and apparatus for easily mounting, holding and facilitating the coating of preselected areas of very thin semiconductor samples. The apparatus includes a base adapted for placement in a coating chamber. The base includes a pair of spaced apart supporting arms onto which a plurality of stacked samples can be loaded. A cover is then slidably positioned over the stacked samples to hold the stacked samples in position during coating. The cover in conjunction with the supporting arms define an open sided cavity to enable the samples to be coated. The apparatus also can be used to hold only one sample.

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Pasadena, CA, United States of America

Siamak Forouhar