Qualcomm Incorporated

Siamack Haghighi

Jung Pill Kim

Hari Rao

A system and method to read and write data at a memory cell that includes multiple non-volatile memories is disclosed. In a particular embodiment, a memory device includes a plurality of memory cells. At least one of the memory cells includes a first non-volatile memory including a first resistive memory element and a second multi-port non-volatile memory including a second resistive memory element. Each of the first non-volatile memory and the second non-volatile memory is accessible via multiple ports.

Memory cell that includes multiple non-volatile memories

A system and method to read and write data at a memory cell that includes multiple non-volatile memories is disclosed. In a particular embodiment, a memory device is disclosed that includes a plurality of memory cells, where at least one of the memory cells comprises a first non-volatile memory including a first resistive memory element and a second multi-port non-volatile memory including a second resistive memory element.

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San Diego, CA, United States of America

Siamack Haghighi