Samsung Electronics Co., Ltd.

Si-woo Kim

Hyo-Jin Kim

Jae-sung Kang

Jong-won Kim

Jeong-Pyo Kim

Eui-Hyuk Jeong

A display driver integrated circuit (IC) and an electronic apparatus including the same are provided. The display driver IC includes a booster configured to boost an external power supply voltage applied to a first node to a same level as that of an internal power supply voltage, and a power supplier including a power level adjustor configured to activate a current path between a second node and ground in response to a control signal indicating entry into a first mode and form a current path between the first node and the second node when the internal power supply voltage at the second node is equal to a reference voltage.

Display driver integrated circuit and electronic apparatus including the same

A voltage generator that prevents latch-up includes: a charge pump circuit that is controlled by first through third enable signals, boosts an internal power voltage generated from an external power voltage, and generates first through fourth voltages; a detector that detects the first through third voltages and generates first through third flag signals that go logic high when the first through third voltages reach predetermined respective voltage levels and maintain logic low when the voltages do not reach the predetermined respective voltage levels; and a charge pump controller that receives the first through third flag signals, and generates the first through third enable signals to have the first through fourth voltages sequentially generated. The voltage generator can prevent latch-up that may occur in a boosting mode or in a normal operation mode.

Voltage generator that prevents latch-up

A charge pump circuit and related method are provided. The charge pump circuit includes first, second and third voltage generation units, first and second control units, and a latch-up prevention unit. The first generation unit regulates a first output signal, the second generation unit boosts a second output signal, and the third generation unit boosts a third output signal in response to the first and second output signals. The first control unit is connected between the first generation unit and the third generation unit, and the second control unit is connected between the second generation unit and the third generation unit. The first and second control units block respective outputs of the first and second generation units during the boosting time for the second output signal. The latch-up prevention unit prevents a latch-up operation caused by a parasitic transistor until the third output signal is maintained at a third voltage.

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Suwon-si, South Korea

Si-woo Kim