Hewlett-packard Company

Hewlett-packard Development Company, L.P.

Other

Hewlett Packard Enterprise Development LP

Hewlett-packard Corporation

Lambda Physik Ag

Si-Ty Lam

Henryk Birecki

Steven Louis Naberhuis

Paul H McClelland

Huei-Pei Kuo

Eric G Hanson

William J Lloyd

Huei Pei Kuo

Christopher A Schantz

Laurie S Mittelstadt

Xia Sheng

Howard H Taub

Vu Thien Binh

Young-Soo You

Zhang-Lin Zhou

Alfred I Pan

Suraj L Hindagolla

Wilhelm Tamm

Siegfrid Dippon

James S Aden

Glen A Hopkins

Lihua Zhao

Gary A Gibson

Ross R Allen

Richard H Henze

An-Chung Robert Lin

William J West

Herbert Gross

Hans-Jurgen Kahlert

Glenn W Weberg

Walter Olbrich

Robert Grub

Jurgen Schweizer

Heinrich Endert

Michael Weitmann

Alfred I Tsong Pan

Sam Burriesci

Huel-Pel Kuo

Joachim Schulte In Den Baumen

A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (FE) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the FE feature. The device further includes a planar interlayer dielectric surrounding the device, for supporting the top electrode. A method of making a resistive memory device, employing in-situ vacuum deposition of all layers, is also provided.

Resistive memory device having field enhanced features

Asymmetrical 2,5-disubstituted-1,4-diaminobenzenes are provided, along with a process for forming both symmetrical and asymmetrical 2,5-disubstituted-1,4-diaminobenzenes.

2,5-disubstituted-1,4-diaminobenzenes

A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

Electron emitter device for data storage applications and method of manufacture

An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.

Focusing structure for electron source

An ultra-high-density data storage device that includes at least one energy beam emitter and a data storage medium that itself includes an organic material. The organic material may include one or more Langmuir-Blodgett layers and may include a conductive polymer. Localized presence or absence of localized disorder in the Langmuir-Blodgett layers may be used to detect data bits formed in the data storage medium. The presence or absence of one-dimensional conductivity in the organic material may also be used to read data bits formed in the data storage medium.

Class of electron beam based data storage devices and methods of use thereof

An electron emission device with nano-protrusions is described. Electrons are emitted from the nano-protrusions and directed by one or more conductors into beams. The beams may be shaped to be collimated, diverged, or converged. The shaped beams from one or more nano-protrusions may be focused onto a target spot through the use of additional electron optics.

Electron emission devices

The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.

Data storage device

Electron emitter device for data storage applications

In an electron emitter based on Metal-Insulator-Semiconductor or Metal-Insulator-Metal emitters, field emission structures are enclosed within the emitter structure. The electron emitter may include a conductive substrate and an electron supply layer formed on the conductive substrate. The electron supply layer, for example undoped polysilicon, has protrusions formed on its surface. The sharpness and density of protrusions may be controlled. Above the electron supply layer and the protrusions, an insulator may be formed thereby enclosing the protrusions. A top conductive layer may be formed above the insulator. The enclosed protrusions are relatively insensitive to vacuum contamination. The thinness of the insulator allows high intensity electric fields at the protrusions to be generated with low applied voltage. Field-enhanced injection of electrons into the insulator and thence through the top conductive layer results. Furthermore, electron beam dispersion and divergence are minimized.

Field-enhanced MIS/MIM electron emitters

Electron source having planar emission region and focusing structure

An ink transfer printing device in which ink transfer is driven by a viscosity change in ink. The ink transfer printing device includes an ink reservoir for retaining ink held under pressure. The ink reservoir is associated with an ink transfer surface which has a plurality of perforations. Under ambient conditions, the viscosity of the ink prevents flow of the ink through the perforations. The ink transfer printing device also includes a viscosity control unit for inducing a change in the viscosity of the ink near certain perforations thereby enabling a controlled amount of the ink near each of these certain perforations to flow through these certain perforations to an outer surface of the ink transfer surface. The ink which has flowed onto the outer surface can then be transferred to an intermediate surface or a printing media. A method for viscosity-driven ink transfer printing is also disclosed. The present invention enables a printer, a copier, or the like to provide low cost, high speed, high resolution printed images.

Method and apparatus for ink transfer printing

An apparatus for laser machining by creating a plurality of discrete and separate beams which are sent to a deflecting device including a support and a plurality of individual elements that act independently and are individually controlled to machine different points on the workpiece simultaneously.

Apparatus for laser machining with a plurality of beams

A printed circuit board is made by producing recesses and/or holes in an electric insulating substrate by laser ablation. The recesses correspond to a desired pattern of conductor structures and/or holes. Conductive material is then deposited on substantially an entire face of the substrate. Conductive material is then removed from the substrate outside the desired pattern of conductor structures and/or holes.

Method of manufacturing printed circuit boards

Growing community of inventors

Pleasanton, CA, United States of America

Si-Ty Lam