Samsung Electronics Co., Ltd.

Si-Hyeung Lee

Sang-jun Choi

Myeong-Cheol Kim

Sang-Gyun Woo

Hyun-Woo Kim

Man-Hyoung Ryoo

Gi-Sung Yeo

Hoo-Sung Cho

Sung-Gon Jung

Gyu-Chul Kim

Chang-Min Park

Chang-Jin Kang

Kwang-sub Yoon

Doo-youl Lee

Ki-young Kwon

According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed in the P type and N type impurity regions. Gate patterns having a second pitch are formed on the active patterns in a direction substantially perpendicular to the active patterns. Other embodiments are described and claimed.

Semiconductor device having sufficient process margin and method of forming same

An integrated circuit semiconductor device including a cell region formed in a first portion of a silicon substrate, the cell region including a first trench formed in the silicon substrate, a first buried insulating layer filled in the first trench, a first insulating pattern formed over the silicon substrate, and a first conductive pattern formed over the first insulating pattern. An overlay key region is formed in a second portion of the silicon substrate and includes a second trench formed in the silicon substrate, a second insulating pattern formed over the silicon substrate and used as an overlay key, and a second conductive pattern formed over the second insulating pattern and formed by correcting overlay and alignment errors using the second insulating pattern. An alignment key region is formed in a third portion of the silicon substrate and includes a third trench formed in the silicon substrate and used as an alignment key, a second buried insulating layer formed in the third trench, and a third conductive pattern formed over the second buried insulating layer and the third trench.

Integrated circuit semiconductor device with overlay key and alignment key and method of fabricating the same

Growing community of inventors

Gyeonggi-do, South Korea

Si-Hyeung Lee