Samsung Electronics Co., Ltd.

Si-hyeung Lee

Sang-jun Choi

Sook Jin Lee

Dong-won Jung

Kwang-sub Yoon

Hyun-woo Kim

Sang-gyun Woo

Ki-young Kwon

Sang-Gyun Woo

Gi-Sung Yeo

Tae-hyuk Ahn

Han-Ku Cho

Yool Kang

Jung-hyeon Lee

Doo-Hoon Goo

Yong-Kug Bae

Seok-hwan Oh

Joo-tae Moon

Dong-Won Jung

Woo-Seok Shim

Young-Koog Han

A semiconductor device and a method of fabricating a semiconductor device provide high quality cylindrical capacitors. The semiconductor device includes a substrate defining a cell region and a peripheral circuit region, a plurality of capacitors in the cell region, and supports for supporting lower electrodes of the capacitors. The lower electrodes are disposed in a plurality of rows each extending in a first direction. A dielectric layer is disposed on the lower electrodes, and an upper electrode is disposed on the dielectric layer. The supports are in the form of stripes extending longitudinally in the first direction and spaced from each other along a second direction. Each of the supports engages the lower electrodes of a respective plurality of adjacent rows of the lower electrodes. Each one of the supports is also disposed at a different level in the device from the support that is adjacent thereto in the second direction.

Semiconductor device and method of fabricating the semiconductor device

In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.

Optical element holder and projection exposure apparatus having the same

There are provided a method of forming a trench for a recessed channel of a transistor and a layout for the same. A layout for the recessed channel according to one aspect of the present invention is formed such that an open region is extended across at least one of a first active region in a lateral direction, and also across another second active region in parallel with the first active region in a diagonal direction, and the extension is cut not to reach an isolation region between two third active regions that are in parallel with the second active region in a diagonal direction, and have noses facing each other in a longitudinal direction, and the layout includes an alignment of a plurality of open regions, which are discontinuously aligned. An etch mask is formed using the layout, and a semiconductor substrate is etched using the etch mask, and a trench for a recessed channel is formed on the active region.

Method of forming trench in semiconductor device

A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.

Resist composition comprising photosensitive polymer having lactone in its backbone

The photosensitive polymer includes a first monomer which is norbornene ester having Cto Caliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.

Photosensitive polymer and chemically amplified photoresist composition containing the same

This invention is directed to a coating composition used for original equipment manufacturing or refinishing uses in the automotive industry, which coating composition utilizes an acrylic polymer which contains substituted or unsubstituted exomethylene lactones or lactams as a comonomer.

A photosensitive polymer which maintains transparency even when exposed to a short-wavelength light source of 193 nm or below, exhibits improved adhesiveness to a substrate, improved contrast and improved resistance to dry etching. The photosensitive polymer includes a first monomer which is alicyclic hydrocarbon carboxylate having an acid-labile C to C tertiary alicyclic hydrocarbon group as a substituent, and a second monomer which is capable of free radical polymerization.

Photosensitive polymer

A photosensitive polymer having a phenyl ring and a lactone group, and a resist composition, wherein the resist composition contains a photosensitive polymer including a monomer unit having at least one group selected from the groups indicated by the following formulas, and a photoacid generator (PAG).

Photosensitive polymer having phenyl ring and lactone group and resist composition comprising the same

Photosensitive polymer and resist composition containing the same

The photosensitive polymer includes a first monomer which is norbornene ester having C to C aliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.

Resist composition comprising photosensitive polymer having loctone in its backbone

A photosensitive polymer represented by the following formula, and a resist composition including (a) a photosensitive polymer represented by the following formula:

Photosensitive polymer having cyclic backbone and resist composition comprising the same

A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern. It is possible to form the photoresist pattern defining an opening having a small size since the photoresist composition comprises the polymer mixture which has advantageous characteristics, such as high contrast, and in which the flow rate of the composition upon thermal flowing can easily be controlled.

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Suwon, South Korea

Si-hyeung Lee