National Taiwan University

Taiwan Semiconductor Manufacturing Comp. Ltd.

National Science Council

Chung Shan Institute of Science and Technology

Si-Chen Lee

Shih-Yen Lin

Samuel C Pan

Kuan-Chao Chen

Meng-Yu Lin

Yu-Wei Jiang

Che-Wei Chang

Chung-Ming Chen

Hung-Hsin Chen

Wan-Jou Lee

Yu-Chun Chien

Chia-Yen Lee

Fang-Tzu Chuang

Chao-Yu Meng

Hsuan-An Chen

Chi-Wen Liu

Miin-Jang Chen

An Shih

Yi-Ting Wu

Chun-Han Chen

Kuen-Yu Tsai

Shiming Lin

Shih-Yen Chen

Shiang-Feng Tang

Chong-Rong Wu

Ya-Tung Cherng

Wen-Shiang Liao

Luan-Yin Chang

Yu-Wei Zhang

Shi-Ming Lin

Ming-Wei Tsai

Pei-En Chang

Yi-Jen Huang

Hsu-Yu Chang

Chi-Chieh Chen

Jheng-Han Lee

Wei-Chieh Hsuch

Zong-Ming Wu

Tse-Chi Lin

Wen-Jyh Sah

Chieh-Hung Yang

Jeng-Shiuh Chou

Chun-Yuan Hsueh

Kang-Chen Lin

Falin Chen

Chi Chen

Shang-Ru Tsai

A method includes forming an interlayer dielectric (ILD) layer over a transistor; forming a first inter-metal dielectric (IMD) layer over the ILD layer; etching a via opening extending through the first IMD layer; forming a first 2-D material layer lining along sides and a bottom of the via opening; depositing a first metal in the via opening and over the first 2-D material layer; performing a chemical mechanism polishing (CMP) process to the first metal until the first IMD layer is exposed; forming a second IMD layer over the first IMD layer; etching a trench in the second IMD layer; forming a second 2-D material layer lining along sides and a bottom of the trench; and depositing a second metal over the second 2-D material layer at a temperature lower than a temperature of depositing the first metal over the first 2-D material layer.

Integrated circuit structure and method for forming the same

A method of fabricating a semiconductor device having two dimensional (2D) lateral hetero-structures includes forming alternating regions of a first metal dichalcogenide film and a second metal dichalcogenide film extending along a surface of a first substrate. The first metal dichalcogenide and the second metal dichalcogenide films are different metal dichalcogenides. Each second metal dichalcogenide film region is bordered on opposing lateral sides by a region of the first metal dichalcogenide film, as seen in cross-sectional view.

2D crystal hetero-structures and manufacturing methods thereof

A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.

Semiconductor device and method of formation

The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoSand/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.

Forming semiconductor structures with two-dimensional materials

A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.

Method of forming a semiconductor device using layered etching and repairing of damaged portions

Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

Semiconductor devices comprising 2D-materials and methods of manufacture thereof

In a method of fabricating a field effect transistor, a Mo layer is formed on the substrate. The Mo layer is sulfurized to convert it into a MoSlayer. Source and drain electrodes are formed on the MoSlayer. The MoSlayer is treated with low-power oxygen plasma. A gate dielectric layer is formed on the MoSlayer. A gate electrode is formed on the gate dielectric layer. An input electric power in the low-power oxygen plasma treatment is in a range from 15 W to 50 W.

Method of manufacturing a FET using a two dimensional transition metal dichalcogenide including a low power oxygen plasma treatment

A process for fabricating an integrated circuit is provided. The process includes providing a substrate and forming a hard mask on the substrate. The hard mask may be formed by atomic-layer deposition (ALD) or molecular-layer deposition (MLD). The process also includes disposing an exposure mask over the hard mask and exposing the exposure mask to a patterning particle to pattern a gap in the hard mask. The patterning particle may be, for example, a photon or a charged particle.

Projection patterning with exposure mask

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Taipei, Taiwan

Si-Chen Lee