Formosa Epitaxy Incorporation

Epistar Corporation

Harvatek Corporation

Formosa Epitaxy Incorporated

Shyi-Ming Pan

Wei-Kang Cheng

Chen-Hong Lee

Chi-Chih Pu

Chih-Shu Huang

Tzu-Hsiang Wang

Shih-Chieh Tang

Cheng-Kuang Yang

Zhi-Ting Ye

Shih-Yu Yeh

Siang-Fu Hong

Fang-I Li

Kuo-Chin Huang

Lung-Kuan Lai

Fen-Ren Chien

Chih-Hsuan Lu

Chih-Wei Liao

Jen-Chih Li

Chih-Ping Ho

Cheng-Kuo Huang

Han-Zhong Liao

Hui-Ching Feng

Ping-Lung Wang

Chun-Ju Tun

Keng-Ying Liao

Yi-Sheng Ting

Jia-Lin Li

Chia-Hung Pan

Yu-Yun Chen

Yung-Hsin Lin

Mam-Tsung Wang

Kuo-Hui Yu

Yu-chih Lin

Yun-Li Li

Sheng-Hung Hsu

Hui Ching Feng

Hung-Li Pan

Chien-Pin Hsu

Yin-Cheng Chu

Huan-Che Tseng

Li-Kai Lu

Chih-Wei Chang

Ru-Shi Liu

Cheng-I Chu

Kuo-Chi Huang

Chi-Yang Chuang

Yu-Cheng Lan

Ching-Ho Tien

Chun-Wei Chen

A light emitting apparatus, including: a first light emitting device with a first substrate having a first upper surface and first bottom surface, a plurality of first LED chips disposed on the first upper surface, emitting a light penetrating the first substrate, and a first wavelength conversion layer directly contacting the plurality of first LED chips and first upper surface, and a first shape in a cross-sectional view; a second wavelength conversion layer directly contacting the first bottom surface; a second shape in the cross-sectional view substantially the same as the first shape; a second light emitting device separated from the first light emitting device, including a second substrate and plurality of second LEDs disposed on the second substrate; a support base connected to the first light emitting device by a first angle and connected to the second light emitting device by a second angle; and a first support arranged between the support base and first light emitting device.

Light emitting apparatus

A light source assembly includes a plurality of cells and a driving circuit. Each of the cells includes a transistor and a light source. The transistor includes a drain region that serves as a cathode of the light source. The driving circuit is configured to drive the cell. An optical sensor cell and a method for manufacturing thereof are also disclosed.

Light source assembly, optical sensor assembly, and method of manufacturing a cell of the same

A light-emitting diode (LED) assembly comprises a plurality of LED cells and a driving circuit. Each of the LED cells includes an LED and a transistor. The LED includes first and second LED layers and an LED electrode. The first LED layer includes a III-V compound semiconductor. The second LED layer is over the first LED layer. The LED electrode is over the second LED layer. The first LED layer is free of an LED electrode. The transistor includes a drain region connected to the first LED layer. The driving circuit is configured to drive the LED cells.

Light-emitting diode (LED) assembly and method of manufacturing an LED cell of the same

A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 &#x3bc;m and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.

Light emitting device

A light source module includes a lighting structure, a light diffusing layer, a wavelength converting layer, and a cover plate. The lighting structure includes a plurality of light emitting elements that are all blue-light emitting elements. The light diffusing layer is disposed on the lighting structure, the wavelength converting layer is disposed on the light diffusing layer, and the cover plate is disposed on the wavelength converting layer.

Display device and light source module having high color conversion efficiency thereof

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Illumination device

A light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member. The color converting layer coats the light emitting chip and the light guiding member coats the color converting layer. The planar or non-planar reflecting member is arranged over the light guiding member. The reflecting member faces toward the light emitting chip and changes the range of illumination of the light emitted by the light emitting chip. The reflecting member can be arranged on a side of the color converting layer and light can be irradiated towards the exterior of the light emitting diode assembly structure.

Light emitting diode assembly structure

The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180&#xb0;, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

Light emitting diode having patterned mirror layer

A LED chip including a first semiconductor layer; an active layer; a second semiconductor layer; a plurality of indentations, wherein each indentation extends downward to reach and expose the first semiconductor layer, wherein each indentation includes a bottom part and two side surfaces in a cross sectional view; an exposing area exposing the first semiconductor layer at a side of the LED chip; a first metal layer disposed on the second semiconductor layer and electrically connecting to the first semiconductor layer; and a first insulating layer formed between the first metal layer and the second semiconductor layer to isolate the first metal layer from the second semiconductor layer; wherein the first metal layer continuously extends to the plurality of indentations, covers the bottom part, the two side surfaces of each indentation and a top surface of the second semiconductor layer around the two side surfaces and contacts the exposing area; and wherein the first metal layer includes a plurality of recesses corresponding to the plurality of indentations.

Light-emitting diode chip having a plurality of indentations

A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.

Semiconductor component and light emitting device using same

A light-emitting diode (LED) chip including a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on said active layer; one or a plurality of indentations, comprising a bottom part extending downward through the second semiconductor layer and the active layer to reach the first semiconductor layer and exposing the first semiconductor layer; a plurality of metal layers, comprising a first metal layer connecting to the first semiconductor layer through the bottom part, and a second metal layer deposited on the first metal layer; and an insulating layer formed between the first and the second metal layers, disposed on the indentation and covering the first metal layer, wherein the second metal layer comprises one or a plurality of recesses at a top surface thereof corresponding to the one or plurality of indentations.

Light-emitting diode chip

Growing community of inventors

Taoyuan County, Taiwan

Shyi-Ming Pan