United Microelectronics Corp.

National Applied Research Laboratories

Shyi-Long Shy

Ming-Tzong Yang

Hong-Tsz Pan

Fu-Liang Yang

Chien-Chao Huang

Chun-Chi Chen

H J Wu

Yueh-Lin Chou

Cheng-San Wu

Wen-An Loong

Guey-Chi Guo

A method for fabricating a patterned layer is disclosed. Firstly, a semiconductor substrate is provided. Then, a precursory gas on the semiconductor substrate is formed. Finally, a patterned layer on the semiconductor substrate is deposited by reacting the precursory gas with at least one electron beam or at least one ion beam. The present invention not only fabricates a patterned layer on the substrate in a single step but also achieves a high lithographic resolution and avoids remains of contaminations by using the properties of the electron beam or the ion beam and the precursory gas.

Method for fabricating patterned layer

A proximity effect correction method for mask production by integrating the electron beam proximity effect correction method and the optical proximity effect correction method such that the problems of having too large a computer-aided design pattern data file during mask production and using the mask to transfer the image to the wafer by a stepper is solved. The correction method of this invention comprises the steps of providing a pattern for forming on a mask, and then dividing the mask area into a plurality of first area patches and a plurality of second area patches, wherein each first area patch contains part of the whole pattern while each second area patch does not contain any pattern. Next, according to pattern density and light contrast, the amount of exposure by electron beam is adjusted such that electron beam proximity effect and optical proximity effect are corrected forming a corrected pattern. Finally, using the corrected pattern, an electron beam exposure operation is carried out to form the mask.

Proximity effect correction method for mask production

A method of preparing a surface for exposure to an electron beam includes forming a water soluble self-acid-doped conducting polyaniline material. The water soluble self-acid-doped conducting polyaniline material may be poly(aniline-co-N-propanesulfonic acid aniline). The polyaniline material may be mixed with polyvinyl alcohol and applied to a surface prior to subjecting the surface to an electron beam. The electron beam is then transmitted through the material and onto the surface, with the polyaniline material acting as a charge dissipation layer.

Electron beam imaging method using conducting polyaniline material

This invention describes the use and method of fabrication of a chromeless quantum phase shift mask and of a chromeless quantum phase shift build-on blank. The build-on blank can be readily inspected, stored for future use, and completed with a feature pattern when needed. The quantum phase shift mask provides improved image resolution and depth of focus tolerance. The quantum phase shift mask requires little or no CAD, or computer aided design, modification over that used for conventional masks.

Quantum chromeless lithography

This invention describes the fabrication and use of a self-aligning phase shifting mask comprised of phase shifting material formed over a patterned layer of half-tone or partially transmitting material. The interaction of light passing through the phase shifting and partially transmitting areas of the mask, the phase shifting only areas of the mask, and the non phase shifting transparent areas of the mask provides greater image resolution and depth of focus tolerance than other lithography methods including other known phase shifting techniques.

Growing community of inventors

Hsinchu, Taiwan

Shyi-Long Shy