National Yang Ming Chiao Tung University

Faraday Technology Corporation

Shyh-Chyi Yang

Wei Hwang

Hao-I Yang

Ching-Te Chuang

Shyh-Jye Jou

Ming-Hsien Tu

Kun-Ti Lee

Hung-Yu Li

Jihi-Yu Lin

A disturb-free static random access memory cell includes: a latch circuit having a first access terminal and a second access terminal; a first switching circuit having a first bit transferring terminal coupled to the first access terminal, a first control terminal coupled to a first write word line, and a second bit transferring terminal; a second switching circuit having a third bit transferring terminal coupled to the second access terminal, a second control terminal coupled to a second write word line, and a fourth bit transferring terminal coupled to the second bit transferring terminal; a third switching circuit having a fifth bit transferring terminal coupled to the fourth bit transferring terminal, a third control terminal coupled to a word line, and a sixth bit transferring terminal coupled to a bit line; and a sensing amplifier coupled to the bit line, for determining a bit value appearing at the bit line.

Disturb-free static random access memory cell

Growing community of inventors

Taipei County, Taiwan

Shyh-Chyi Yang